ATC 700 B 101 G P Search Results

CDR11BP

Abstract: AMERICAN TECHNICAL CERAMICS A700AP
Contextual Info: ATC 700 A Series NPO Porcelain and Ceramic Multilayer Capacitors • Case A Size .055" x .055" • Capacitance Range 0.1 pF to 1000 pF • Low ESR/ESL • Zero T.C. • Low Noise • High Self-Resonance • Rugged Construction • Established Reliability (QPL)

700B

Abstract: ATC 700 B 101 G P
Contextual Info: ATC 7 0 0 B Series NPO Porcelain and Ceramic M ultilayer Capacitors • Case B Size .110" x .110" Capacitance Range 0.1 pF to 5100 pF • Low ESR/ESL Zero T.C. • Low Noise High Self-Resonance ELECTRICAL A N D MECHANICAL • Rugged Construction Established Reliability (QPL)

atc 700a

Contextual Info: ATC 700 A Series NPO Porcelain and Ceramic Multilayer Capacitors • Case A Size • Capacitance Range .055" x .055" 0.1 pF to 1000 pF • Low ESR/ESL • ZeroT.C. • Low Noise • High Self-Resonance ELECTRICAL AND MECHANICAL • Rugged • Established Reliability (QPL)

CDR11BP

Contextual Info: ATC 700 A Series NPO Porcelain and Ceramic Multilayer Capacitors • Case A Size .055" x .055" • Capacitance Range 0.1 pFto1000pF • Low ESR/ESL • Zero T.C. • Low Noise • High Self-Resonance ELECTRICAL AND MECHANICAL • Rugged Construction • Established Reliability (QPL)

Contextual Info: ATC 700 B Series NPO Porcelain and Ceramic Multilayer Capacitors Case B Size Capacitance Range .110" x .110" 0.1 pF to 5100 pF Low ESR/ESL ZeroT.C. Low Noise High Self-Resonance Rugged Established Reliability (QPL) Construction ATC, the industry leader, is announcing new improved ESR/ESL per­

Contextual Info: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is

Contextual Info: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power

MOSFET J132

Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
Contextual Info: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: 0912GN-300.Rev2 0912GN-300 300 Watts - 65 Volts, 128 s, 10% Broad Band Data Link 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-300 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain,

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

c19a

Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Contextual Info: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

MRF373

Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Contextual Info: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215 MHz Preliminary GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain,

resistor 177 178 179

Contextual Info: ERICSSON ^ PTF 10100 165 Watts, 860-900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output.

G200

Abstract: 10147
Contextual Info: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

Contextual Info: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

Contextual Info: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The 10107 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts power output. Nitride surface passivation and gold

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136
Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold

Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and

0221l

Abstract: 57-TYP
Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold

945 TRANSISTOR

Abstract: AN1294 PD57006 PD57006S 0821 ST
Contextual Info: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

945 TRANSISTOR

Abstract: AN1294 PD57006 PD57006S smd transistor z8
Contextual Info: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Contextual Info: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package

tl249

Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier