ATC 4400 Search Results

1008wl

Abstract: atc 1008wl 0603WL 0805WL SMD INDUCTOR marking code 1206WL 1008 wl MARKING WL smd code marking NY atc1008wl
Contextual Info: AMERICAN TECHNICAL CERAMICS INDUCTOR PRODUCTS Manufactured for ATC C O R P O R AT E P R O F I L E Corporate Profile American Technical Ceramics Corp. ATC provides component and custom integrated packaging solutions for the RF, microwave and telecommunications industries. For over forty years we have been “The Engineer’s Choice”.

SIEMENS 3TF47 contactor

Abstract: 3UA50 siemens modules GR 60 48 V 120 A 3TF52 3UA62 SIEMENS 3TF46 contactor siemens mpcb 3TK2827 3tf54 3tf35
Contextual Info: Unmatched safety that meets all your needs LV Switchgear Price List Maximum Retail Price w.e.f. 1st November, 2010 Answers for industry. s Everything Easy SIRIUS SIEMENS – INDUSTRY SECTOR TRAINING CENTER SITRAIN INDIA, KALWA. List of courses at SITRAIN-Kalwa & Authorized Training Centers ATC

lm 4066

Contextual Info: F LM 3 742-18DA Internally M atc h ed Power CìaAs I E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation pt Tc = 25°C

ACS 085

Abstract: thyristor cs 550 THYRISTOR cs 550 16 CS 250-12 thyristor CS 250-14 CS thyristor cs 411-23 abb acs 550 CS thyristor cs 6 CS 250-12
Contextual Info: A S E A B R O U N / ABB SEMICON A3 D O M flB O a D .□ □ □ □ 1 7 3 3 J " ' T - 2.5 - 0 Phase control thyristors Netzthyristoren Thyristor Vdrm Vrrm Itrms V A * TvD/tvue rAvi/Tc Itavm To = 85°C ATC A 8,3 ms 10 ms TVJ=45°C tvjm A A2s A2s 400 CS 226-04 go 1

atc 1117

Abstract: ATC 4400
Contextual Info: ATC 0 4 0 2 WL S ERI ES W I R E W O U N D CHIP I N D U C T O R S Inductor Selection G uide Inductance nH Tolerance C od e Q min. K J K.J 16 16 19 19 19 19 20 20 20 22 22 22 21 24 24 24 24 24 24 24 24 20 25 2.0 €> 250 (MHz) 2.2 4> 250 (MHz) h K. J K.J 3.6 4> 250 (MHz)

0805CS-101XKBC

Abstract: kl2 j2 KSS 1206
Contextual Info: !Ü P H RF2619 F MICRO-DEVICES 3 V CDMA/FM T R A N S M IT A 6 C A M PLIFIER Typical A pplications • 3 V CDMA/FM Cellular Systems General Purpose Linear IF Amplifier • Supports Dual-Mode AM PS/CDM A Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA

IH33

Abstract: 0805CS-101XKBC 0805CS101XKBC ATC 1033 100A5R1CP150X PCC103B PCC103BTR-ND
Contextual Info: •is-*- RF2609 MICRO-DEVICES • CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AMPS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA • Commercial and Consumer Systems The RF2609 is a complete AGC amplifier designed for

Contextual Info: R F U MICRO•DEVICES CDMA/FM TRANSMIT AGC AMPLIFIER Typical Applications • C D M A /F M Cellular Systems General Purpose Linear IF Amplifier • Supports Dual-M ode A M P S /C D M A Portable Battery Powered Equipment • Supports Dual-M ode TA C S/CDM A

P33K

Abstract: KA 7625
Contextual Info: i t y : RF2619 [: MICRO DEVICES 3 V CDMA/FM TR A N S M IT AGC AM PLIFIER Typical Applications • 3 V CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AMPS/CDMA • Portable Battery Powered Equipment

Contextual Info: R F H RF2609 MICRO DEVICES CDMA/FM TR A N SM IT AGC AM PLIFIER Typ ical A p plications • CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AM PS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA

Panduit

Abstract: 42020 EE 44020 l244 100A5R1CP150X RF2609 RF2609PCBA SSOP-16 High IP3 high gain 1008CS271XKBC
Contextual Info: RFEÜ RF2609 MICRO-DEVICES CDM A /FM T R A N S M IT AGC A M P L IF IE R T y p ic a l A p p lic a tio n s • CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AMPS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA

b3040S

Contextual Info: R F H RF2619 MICRO DEVICES 3 V CD M A /FM T R A N S M IT AG C A M P L IF IE R Typ ical A p plications • 3 V CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AM PS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA

Contextual Info: B F RF9909 I I MICRO ‘DEVICES CDMA/FM TRANSMIT AGC AMPLIFIER T y p ic a l A p p lic a tio n s • CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AMPS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA

PCC103BTR-ND

Abstract: KA 7625 RF9909 SSOP-16
Contextual Info: RFH RF9909 MICRO DEVICES CDMA/FM TR A N SM IT AGC AM PLIFIER Typ ical A p plications • CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AM PS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 0, 12/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

ATC100A101

Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

FET 4900

Abstract: MRFG35005ANT1 application note A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

MN102L2503

Abstract: ic 4026 down counter MN10200 mn10200 instruction MN102 MN102L490A MN102LF25Z AP6M national semiconductor op amp kb25a
Contextual Info: MICROCOMPUTER MN102L00 MN102L2503/25A/25D/ 25Z/25G/F25Z/490A/62D/ 62F/62G LSI User's Manual Pub.No.22262-010E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotypes and product names written in this manual are trademarks or registered trademarks

IrL 1540 N

Abstract: atc 17-33 A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 ATC100a101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

atc 17-33

Abstract: FET 4900 CRCW12061000FKTA A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

A1156 TRANSISTOR

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB