ATC 17 25 Search Results

ATc Fuses

Abstract: 32v 10a fuse Ato fuse ms 3a
Contextual Info: REVISIONS PART NO. ECN # REV DESCRIPTION - A RELEASED MCATQ - Series DRAWN DATE Geetha 02/6/08 CHECKD DATE APPRVD DATE Suresh 02/6/08 G. C 17/6/08 Specifications: Transparent body. Voltage rating : 32V and less. Equivalent ATO and ATC fuses. Option : Gold plated terminal available

AN7293NFBQ

Abstract: AN7293NSC K1413
Contextual Info: ICs for FM/AM Tuner AN7293NFBQ FM-IF, NC, MPX IC for Car Radio • Overview Unit: mm 24 17 ■ Features 0.8 • A less number of external components is required 8 components reduction compared with our conventional IC • Neighbering-station interference characteristics improvement by band-ATC function

Contextual Info: AT C 5 0 6 W L C S E R I E S U B L INDUCTORS ATC 506WLC2R0KG250B Ultra-Broadband Inductor Features: • Inductance: 2.0 µH, typ. • Operating Frequency: 2.3 MHz -3 dB roll-off through 40 GHz, typ. • Insertion Loss (shunt mounted): 0.5 dB, typ. • Return Loss (shunt mounted): -17 dB, typ.

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN3R30KG350T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.3 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN2R00KG494T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.6 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN10R7KG150T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 2.3 MHz -3 dB roll-off through 40 GHz, typ. • Insertion Loss (shunt mounted): 0.5 dB, typ. • Return Loss (shunt mounted): 17 dB, typ.

ATC506WLSN1R47

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN1R47KT694T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 2.8 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.4 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.

G236

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN6R00KG236T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 2.3 MHz -3 dB roll-off through 40 GHz, typ. • Insertion Loss (shunt mounted): 0.5 dB, typ. • Return Loss (shunt mounted): 17 dB, typ.

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN2R00KT494T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.6 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN3R30KT350T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.3 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.

Contextual Info: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN10R7KT150T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 400 KHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.4 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.

TB185

Contextual Info: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W

ATS 137 hall effect switch

Abstract: 137 hall SENSOR hall effect speed sensor 137 SOT23 hall VCD/DVD diagram conditioning circuits for window open/close ATS137 hall digital switch hall effect 175 hall sensor
Contextual Info: !ATC ATS137 ! Single Hall Effect Switch ! „ Features „ General Description - 3.5V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open-Collector pre-driver - 25mA maximum sinking output current. - Reverse Polarity Protection

SOT23 hall

Abstract: sot23 marking JB 3 pin hall effect sensor marking JB sot23 top marking c2 sot23 ATS177 hall effect dC motor single phase
Contextual Info: ATC ATS177 Single Output Hall Effect Latch „ Features „ General Description - 3.5V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open-Collector pre-driver - 25mA maximum sinking output current. - Reverse polarity protection

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

MRF6VP2600H

Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

ATC-10

Abstract: ATC-15 E56412 BLADE-TYPE TYPE 3 ATC
Contextual Info: Bussmann Automotive Blade-Type Fuses ATC 32 Volts DC, 1 to 40 Amps Dimensional Data 11.7 AMPERE RATING 7.5 10 15 20 25 30 40 3 4 5 Time-Current Characteristic Curves–Average Melt 100 5.12±.13 19.14±.17 12.54 MAX. 18.73±.32 4.01±.12 TIME IN SECONDS

Contextual Info: PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been

Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805

MRF6VP2600H

Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

TL107 linear

Abstract: TRANSISTOR tl131
Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805

TB219

Abstract: lq801
Contextual Info: August 17, 2012 TB219#3 Frequency=30-512MHz Pout=20W Gain=12dB Vds=28Vdc Idq=200mA Efficiency=35-40% LQ801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com August 17, 2012 25.0 50 22.5 45 20.0 40 17.5 35 15.0 30 12.5

ATC100B151J

Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

mrf6vp2600h

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.