PTFB192557SH Search Results
PTFB192557SH Datasheets (2)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PTFB192557SHV1R250XTMA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288G-4/2 | Original | 393.73KB | |||
| PTFB192557SHV1XWSA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288G-4/2 | Original | 393.73KB |
PTFB192557SH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been |
Original |
ptfb192557sh250-watt | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
Original |
ptva093002tc960mhz758mhzpxac201602fc+6 |