AT006N3 Search Results

Contextual Info: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–8 GHz AT006N3-93 Features -93 • Dual Control Voltages 0.160 ■ Low Insertion Loss 0.140 ■ Broadband DC–8 GHz 0.100 ■ Small Low Cost “Chip on Board” Package 0.060 Description 0.020 0.000

AT006N3-93

Contextual Info: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–8 GHz AT006N3-93 Features -93 • Dual Control Voltages 0.160 ■ Low Insertion Loss 0.140 ■ Broadband DC–8 GHz 0.100 ■ Small Low Cost “Chip on Board” Package 0.060 Description 0.020 0.000

Contextual Info: GaAs 30 dB 1C Voltage Variable Dual Control Attenuator DC-6 GHz ESAlpha AT006N3-00 Chip Q j t l i n e F eat ur e s • 30 dB Range O O T-; CO LO LO O ■ Low DC Drain Tt 1o O ■ Fast Switching ■ Capable of Meeting MIL-STD Requirements5 D e s c ri p t io n

Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Dual Control Attenuator DC-6 GHz EDlAipfia AT004N3-11, AT006N3-00, AT006N3-10, AT006N3-01 Features 30 dB Range Low D.C. Drain A T004N 3-11 Fast Switching A T006N 3-01 Low Insertion Loss 1.2 dB Low Phase Shift Bridged “T” Design

AT006N3-00

Contextual Info: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–6 GHz AT006N3-00 0.100 • 30 dB Range ■ Low DC Drain 1.014 Chip Outline 0.556 Features 0.940 ■ Fast Switching 0.840 ■ Capable of Meeting MIL-STD Requirements5 0.601 Description 0.100 1.115

Contextual Info: GaAs 30 dB 1C Voltage Variable Dual Control Attenuator DC-6 GHz ESAlpha AT006N3-01, AT006N3-10 Features -01 • Dual Control Voltages 0.220 5.59 mm 0.210 (5.33 mm) ■ Low Insertion Loss -0 .1 3 0 (3.30 mm) TYP. 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP.

Contextual Info: GaAs 30 dB 1C Voltage Variable Dual Control Attenuator DC-6 GHz ESAlpha AT006N3-01, AT006N3-10 -01 F eat ur e s • Dual Control Voltages 0.220 5.59 mm 0.210 (5.33 mm) ■ Low Insertion Loss ■0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

AT006N3-00

Abstract: wj rf switch
Contextual Info: ESAlpha GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC-6 GHz A T006N 3-00 Chip Outline Features • 30 dB Range in 1 -; ò ■ Low DC Drain o ò i-1 ■ Fast Switching ■ Capable of Meeting MIL-STD Requirements5 Description The AT006N3-00 chip is a GaAs FET MMIC non-reflective

AT006N3-01

Abstract: AT006N3-10
Contextual Info: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–6 GHz AT006N3-01, AT006N3-10 Features -01 • Dual Control Voltages 0.220 5.59 mm 0.210 (5.33 mm) ■ Low Insertion Loss 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.

Contextual Info: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC-6 GHz EBAlpha AT006N3-00 Features Chip Outline • 30 dB Range ■ Low DC Drain ■ Fast Switching ■ Capable of Meeting MIL-STD Requirements5 Description The AT006N3-00 chip is a GaAs FET M M IC non-reflective

AT006N3-93

Abstract: Voltage Controlled Attenuator Application Notes ALPHA INDUSTRIES
Contextual Info: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–8 GHz AT006N3-93 Features -93 • Dual Control Voltages 0.160 ■ Low Insertion Loss 0.140 ■ Broadband DC–8 GHz 0.100 ■ Small Low Cost “Chip on Board” Package 0.060 Description 0.020 0.000

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:

AS117-45

Abstract: AD004T2-00 AK006R2-01
Contextual Info: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control