AT002N Search Results

Contextual Info: GaAs 50 dB 1C Voltage Variable Dual Control Attenuator DC-3 GHz ESAlpha AT002N5-00 F ea t ur e s • 50 dB Range Chip Q j t l i n e § è s s o o o o ■ Low Insertion Loss ■ Fast Switching ■ Meets MIL-STD-883 Screening Requirements 13706983 D e s c ri p t io n

AT002N5-00

Abstract: dc10-20
Contextual Info: GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC-3 GHz EHAlpha AT002N5-00 Chip Outline Features • 50 dB Range ■ Low Insertion Loss ■ Fast Switching ■ Meets MIL-STD-883 Screening Requirements Description The AT002N5-00 attenuator provides up to 50 dB variable

AT002N5-10

Contextual Info: GaAs 50 dB MMIC FET Voltage Variable IBAtoha ' Dual Control Attenuator DC-3 GHz AT002N5-00, AT002N5-01, AT002N5-10, AT002N5-11 m. Features • 50 dB Range ■ Low D.C. Drain ■ Fast Switching ■ Low Insertion Loss ■ Chip Size 45 x 48 x 8 Mils ■ Meets M IL -S T D -8 83 Screening Requirements

DC bias of gaas FET

Abstract: Application Notes ALPHA INDUSTRIES DC bias of FET AT002N3-12
Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Öl Alpha Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, Non-Reflective

Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, N on-R eflective

AT002N3-12

Contextual Info: GaAs IC 30 dB Voltage Variable Attenuator Dual Bias DC–2.5 GHz AT002N3-12 Features SOIC-8 • Dual Voltage Control PIN 8 0.050 1.27 mm BSC ■ Low Insertion Loss < (1.2 dB) ■ Bridged “T” Design, Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1

Contextual Info: GaAs 50 dB 1C Voltage Variable Dual Control Attenuator DC-3 GHz ESAlpha AT002N5-11 -11 F eat ur e s • Dual Control Voltages ORIENTATION , M ARK . -0 .1 8 0 4.57 mm SQ . MAX. ■ Low Insertion Loss ■ 8 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD

Contextual Info: GaAs 1C 30 dB Voltage Variable Attenuator Dual Bias DC-2.5 GHz EHAlpha AT002N3-12 Features SOIC-8 • Dual Voltage Control PIN 8 ■ Low Insertion Loss < 1.2 dB * — 0.050 (1.27 mm) BSC ^ n f1 [ ■ Bridged‘T ’ Design, Non-Reflective PIN 1 INDICATOR -

Contextual Info: GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC-3 GHz EBAlpha AT002N5-00 Features Chip Outline • 50 dB Range ó d o ö ■ Low Insertion Loss ■ Fast Switching ■ Meets MIL-STD-883 Screening Requirements Description The AT002N5-00 attenuator provides up to 50 dB variable

Contextual Info: GaAs 50 dB 1C Voltage Variable Dual Control Attenuator DC-3 GHz EHAlpha AT002N 5-01, AT002N 5-10 •01 Features • Dual Control Voltages 0.220 5.59 mm • 0 .2 1 0 (5 .3 3 mm) " • -0 .1 3 0 (3.30 mm) TYP. ■ Low Insertion Loss 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

Contextual Info: ESAlpha GaAs 50 dB 1C Voltage Variable Dual Control Attenuator DC-3 GHz AT002N 5-01, AT002N 5-10 •01 Features ■ Dual Control Voltages 0.220 5.59 mm 0.210 (5.33 mm) ■ Low Insertion Loss -0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

Contextual Info: GaAs 50 dB 1C Voltage Variable Dual Control Attenuator DC-3 GHz ESAlpha rROQF COPY AT002N5-00 Features Chip Qjtline • 50 dB Range ■ Fast Switching ■ Low Insertion Loss ■ Meets MIL-STD-883 Screening Requirements § g s 5 13706983 Description The AT002N5-00 attenuator provides up to 50 dB variable

Contextual Info: GaAs 50 dB 1C Voltage Variable Dual Control Attenuator DC-3 GHz ESAlpha AT002N5-01, AT002N5-10 -01 F eat ur e s • Dual Control Voltages 0.220 5.59 mm 0.210 (5.33 mm) ■0.130 (3.30 mm) TYP. ■ Low Insertion Loss 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

AT002N5-01

Abstract: AT002N5-10
Contextual Info: GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-01, AT002N5-10 Features -01 • Dual Control Voltages 0.220 5.59 mm 0.210 (5.33 mm) ■ Low Insertion Loss 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.

AT002N3-12

Abstract: Application Notes ALPHA INDUSTRIES
Contextual Info: GaAs IC 30 dB Voltage Variable Attenuator Dual Bias DC–2.5 GHz AT002N3-12 Features SOIC-8 • Dual Voltage Control PIN 8 0.050 1.27 mm BSC ■ Low Insertion Loss < (1.2 dB) ■ Bridged “T” Design, Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1

AT002N5-00

Contextual Info: GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-00 • Low Insertion Loss V1 ALT. 1.230 ■ Fast Switching 0.981 0.793 0.349 ■ 50 dB Range 0.570 Chip Outline Features V2 (ALT.) GND GND 1.076 1.072 ■ Meets MIL-STD-883 Screening

Contextual Info: GaAs 50 dB 1C Voltage Variable Dual Control Attenuator DC-3 GHz EHAlpha AT002N5-11 -11 Features • Dual Control Voltages O R IE N T AT IO N , M A R K - -0 .1 8 0 4 .5 7 mm SQ . MAX. ■ Low Insertion Loss ■ 8 Lead Hermetic Surface Mount Package

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■