AT 2003B Search Results

2SC4002

Abstract: ITR06235 ITR06236
Contextual Info: 2SC4002 Ordering number : ENN2960A NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 2SC4002 Ordering number : ENN2960A NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C

transistor c2362

Abstract: 2SC2362 A1016 2SA2362 2SA1016 C2362 2SA1016K 2sc2362 TRANSISTOR 2SA23 2SC2362K
Contextual Info: Ordering number: EN 572D 2SA1016.1016K/2SC2362,2362K k J PNP/ NPN Epitaxial Planar Silicon Transistors SAKYO High-Voltage Low-Noise Amp _ Applications : 2SA101 6 ,1 0 16K Absolute Maximum Ratings at t . =25°C 2SA1016,2SC2362 2SA1016K,2SC2362K u n i t

2SK772

Abstract: 140je N0239
Contextual Info: Ordering number: EN 2392A N0.2392A 2SK 772 N-Channel Junction Silicon FET SA \YO i AF Amp Applications Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C

3H1 ferroxcube

Abstract: ferroxcube 3E2 4322-020-34420 43220203440 4330-030-34220 432202034400 4313-020-15170 4322-021-33850 4322-020-97160 4322-021-30
Contextual Info: !r0 FERROKCUBE Description by Part Number List FERROXCUBE PART NUMBERS 12NC BREAKDOWN 43 12 Magnetic for 3rd party Factory code 020 5593 Pairs Halves Accessories Drawing no. Issue no. changes with packaging at factory FACTORY CODES SET CODES 35 = 12 = 22 =

2SK546

Contextual Info: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

1943a

Abstract: 4j to92 2SC3303 2SC3383 2005A 2sc3363 2SA1392 SC3383 u 5601 1804J
Contextual Info: Ordering number: EN 1943A 2SA1392/2SC3383 PNP/ NPN Epitaxial Planar Silicon Transistors SAXYO i AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute Maxima Batings at Ta=25°C Collector to Base Voltage CBO Collector to Emitter Voltage vCEO

2SK546

Contextual Info: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

2SK772

Abstract: 2392A
Contextual Info: Ordering number: EN 2392A 2SK 772 N 0 .2 39 2A N-Channel Junction Silicon FET SA \YO i AF Amp Applications / Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C

2SA984

Abstract: 2SC2274 TRANSISTOR 2SA984 transistor 2sc2274 2SA984 sanyo 2SC2274-F TR 2SA984-F
Contextual Info: Ordering number: EN465G 2SA984/2SC2274 N0.465G PNP/NPN Epitaxial Planar Silicon Transistors SAXYO AF Power Amp Applications Features • High breakdown voltage Vceo—50V . • High current (Ic = 500mA). • Low saturation voltage. ( ) : 2SA984 A bsolute Maximum R atings at T a = 25°C

Contextual Info: tijca A X iC O M Telecom-, Signal- and RF Relays E lectronics P2 V23079 Relay Coil Data values at 23 °C Nominal voltage ^7nom O perate/set voltage range Minimum Maximum voltage U . voltage U max ° Vdc Vdc Ordering Information Release/ reset voltage Minimum

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

kijima

Abstract: 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium
Contextual Info: Ordering number:EN550F _ 2SD879 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications A p p licatio n s • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. • The charge time is approximately 1 second faster than th at of germanium transistors.

2SA1699

Abstract: 2005A
Contextual Info: Ordering number: EN 2973 2SA1699 SA i YO PNP Epitaxial Planar Silicon Transistor i High-Voltage Driver Applications F ea tu res . H igh breakdown voltage •Adoption of MBIT process ■Excellent hps linearity A b so lu te M axim um R a tin g s at Ta = 25°C

LH1504

Contextual Info: LH1500, LH1504, LH1510, LH1516 Electrical Specifications Absolute Maximum Ratings Ta = 1 Form A 25 ° c Stresses in excess of the Absolute Maximum Ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this

balanced modulator using op-amp

Contextual Info: HPMX-2003/5 Demonstration Circuit Board version 1 7/15/94 MR file: i:\data\demobord\2003bord.doc Applications Bulletin Introduction The circuit board described is designed for use with either the HPMX-2003 or the HPMX-2005 vector modulator MMICs. It allows

2SC2300

Abstract: 2SC3000 ITR05205 ITR05206 ITR05207 ITR05208
Contextual Info: Ordering number:ENN866C NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Features Package Dimensions • FBET series. · High fT and small Cre. unit:mm 2003B [2SC3000] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 Specifications

2SA1699

Abstract: ITR04195
Contextual Info: Ordering number:ENN2973 PNP Epitaxial Planar Silicon Transistors 2SA1699 High-Voltage Driver Applications Features Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2003B [2SA1699] 5.0 4.0 5.0 4.0

2SC4002

Abstract: ITR06235 ITR06236 ITR06237
Contextual Info: Ordering number:ENN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2003B [2SC4002] 5.0 4.0 5.0

2SD1853

Contextual Info: Ordering number:EN2506 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1853 Driver Applications Applications Package Dimensions • Motor drivers, hammer drivers, relay drivers. unit:mm 2003B Features [2SD1853] 5.0 4.0 4.0 5.0 · High DC current gain.

2SA1246

Abstract: 2sc3114 ITR03038 ITR03039 ITR03040
Contextual Info: Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and highly resistant to breakdown. unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 5.0 4.0 0.6

2SC4002

Contextual Info: Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2003B [2SC4002] 5.0 4.0 5.0

2SC4449

Abstract: EN3241
Contextual Info: Ordering number:EN3241 NPN Triple Diffused Planar Silicon Transistor 2SC4449 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions unit:mm 2003B [2SC4449] 5.0 4.0 4.0 5.0 • High breakdown voltage. · Small reverse transfer capacitance and excellent high

2SD879

Abstract: Transistor 5503
Contextual Info: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.