ASI1 Search Results

ASI1002

Abstract: transistor D 1002 ASI10523
Contextual Info: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2 W / 1,000 MHz

ASI1005

Abstract: ASI10524
Contextual Info: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz

ASI1002

Abstract: ASI10523 class E power amplifier
Contextual Info: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2.0 W / 1,000 MHz

ASI1001

Abstract: ASI10522
Contextual Info: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz

ASI1020

Abstract: ASI10526
Contextual Info: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz

1005 NPN

Abstract: ASI1005 ASI10524
Contextual Info: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz

ASI1010

Abstract: ASI10525
Contextual Info: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz

ASI1010

Abstract: ASI10525
Contextual Info: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz

Contextual Info: 1N829A asi TEMP COMPENSATED ZENER DIODE DESCRIPTION: The ASI1N829A is a Silicon Temperature Compensated Zener Diode Designed for High Stability Voltage Reference Applications. MAXIMUM RATINGS Pto t 400 mW @ Ta = 50 °C -55 °C to +175 °C Tj T stg -65 °C to +175 °C

ASI1020

Abstract: ASI10526 asi-1020
Contextual Info: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz

Contextual Info: 1N1345B/BR asi SILICON POWER RECTIFIER DESCRIPTION: The ASI1N1345B/BR is Designed for General Purpose PowerSupply Applications. • 1N1345B = Anode to Stud • 1N1345BR = Cathode to Stud MAXIMUM RATINGS lo 6.0 A @ T C= 150 °C V rrm 300 V P diss 25 W @ T C= 150 °C

1N1344B

Contextual Info: 1N1344B SILICON POWER RECTIFIER DESCRIPTION: The ASI1N1344B/1N1344BR is Designed for G eneral Purpose P ow er Supply Applications. PACKAGE STYLE DO- 4 • 1N1344B = C athode to Stud • 1N1344BR = A node to Stud s Y M B L MAXIMUM RATINGS MIN. MILLIMETERS MAX.

ASI1001

Abstract: ASI10522
Contextual Info: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz

TVV030A

Abstract: IC 555 ASI10661
Contextual Info: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System

ASI10530

Abstract: ASI2010 ASI20
Contextual Info: ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG A The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. ØD B .060 x 45° C HA M F E R C E FEATURES: G L • PG = 5 dB min. at 10 W/ 2,000 MHz

CBSL150

Abstract: ASI10586
Contextual Info: CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG C .080x45° FEATURES: A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz

ULBM25

Abstract: ASI10683
Contextual Info: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is a gold metallized RF power transistor designed for 12.5 Class-C applications in 450-513 MHz frequency range. It utilizes Emitter Ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

HF250-50

Abstract: ASI10615 250WPEP
Contextual Info: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W PEP

ASI2223-4

Abstract: ASI10531
Contextual Info: ASI2223-4 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG A The ASI 2223-4 is Designed for General Purpose Clacc C Applications up to 2.3 GHz. .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G H • Internal Input/Output Matching Networks

VLB10-12S

Abstract: ASI10734
Contextual Info: VLB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold Metalization System

ARU300

Abstract: ASI10549 AUR300
Contextual Info: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for Class C UHF Radar Applications up to 500 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Internal Input Matching Network • PG = 9.5 dB at 300 W/500 MHz

MLN1027S

Abstract: ASI10619
Contextual Info: MLN1027S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027S is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class A Operation • PG = 9.0 dB at 0.5 W/1.0 GHz • Omnigold Metalization System

HF30-28S

Abstract: ASI10605 HF30-28F
Contextual Info: HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD

TVV100

Abstract: ASI10662
Contextual Info: TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV100 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System