AS 102 240 100 Search Results

capacitor 221 1kv

Abstract: 222 2Kv capacitor 103 1KV capacitor 502 1kv r 221 1kv 561 1KV CERAMIC CAPACITOR 472 1kv 103 1KV CERAMIC CAPACITOR capacitor 472 2KV r 151 1kv
Contextual Info: CERAMIC DISC CAPACITOR Class II 50V,100V,500V,1KV,2KV,3KV, Hi-K Type w w w. p a s s i v e c o m p o n e n t . c o m FEATURES : • Capacitance has non-linear temperature coefficient. ■ Large capacitance in small size. ■ Epoxy Coating for 2KV and 3KV parts equivalent to UL94V-0 standards .

tennelec tc-454

Abstract: 10-32 UNC-2B ortec 454 TACCA0278EB Dewar ortec TAC R3809U
Contextual Info: NEAR INFRARED MICROCHANNEL PLATEPHOTOMULTIPLIER TUBE WITH COOLER H10840-68/-69 Compact NIR MCP-PMT Series Featuring with Fast Time Response FEATURES ●High Speed Rise Time: 170 ps Typ. T.T.S. (Transit Time Spread): 100 ps (FWHM) A ●Compact Profile Effective Photocathode Area: 2 mm diameter

VCSO

Abstract: VS509
Contextual Info: VS-509 Dual Frequency VCSO Features • Industry Standard Package, 9.1 x 13.8 x 3.1 mm  5 Generation ASIC Technology for Ultra Low Jitter 125 fs-rms fN = 622.08 MHz, 12 kHz to 20 MHz 120 fs-rms (fN = 622.08 MHz, 50 kHz to 80 MHz) th  Output Frequencies from 150 MHz to 1000 MHz

MIFARE DESFire

Contextual Info: PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F SOT186A 12 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,

ua 471

Contextual Info: RADIAL TYPE SK Standard, For General Purposes Series LK SK SM • SK series has high value of CV for general purposes. SPECIFICATION Characteristic Item Operation Temperature Range -25 ~ +85oC -40 ~ +85oC Rated Working Voltage 6.3 ~ 100VDC 160 ~ 450VDC ±20% M

Contextual Info: SPECIFICATION FOR APPROVAL REF. : ABC'S DWG NO. PROD. Filter Coil NAME REV. Ⅰ﹒Configuration and dimensions： A Wψ E C B Ⅱ﹒Characteristics Of core material： Uiac：75 Bs ：14000 Gauss Temperature stability：±5 - 10% Gauss 15000 10000 5000

Transistor AC 51

Contextual Info: PBSS306NZ 100 V, 5.1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

S306NZ

Abstract: PBSS306NZ PBSS306PZ SC-73 philips transistor smd code
Contextual Info: PBSS306NZ 100 V, 5.1 A NPN low VCEsat BISS transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PBSS305ND

Abstract: PBSS305PD
Contextual Info: PBSS305ND 100 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 7 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: ATC100 B Series Porcelain Superchi[f Multilayer Capacitors • Case B Size Capacitance Range .110" x . 110" 0.1 pF to 1000 pF • High Q Ultra-Stable Performance • Low ESR/ESL High Self-Resonance ELECTRICAL AND MECHANICAL • Low Noise Established Reliability (QPL)

048N06L

Abstract: IPP048N06L IPB048N06L PG-TO220-3 66a smd
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature

Contextual Info: F-212 BTSW–110–01–T–D MNT–120–BK–T SNT–100–BK–T–H SNT–100–BK–G 2,54mm .100" JL–400–25–T BTMM–106–01–T–S SNT, MNT, 2SN, SNM, PK, JL, BTMM, BTSW SERIES SHUNTS & JUMPERS SPECIFICATIONS SNT For complete specifications

Contextual Info: ATC 100 C Series Porcelain High RF Power Multilayer Capacitors Case C Size .250" x .250" Capacitance Range 1 pF to 2700 pF High Q Ultra-Stable Performance Low ESR/ESL High RF Current/Voltage ELECTRICAL A N D MECHANICAL High RF Power High Reliability SPECIFICATIONS

Contextual Info: SHD117236 P/N SHD117236(P/N)A SHD117236(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4578, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: Switching Power Supply

SHD117236

Contextual Info: SHD117236 P/N SHD117236(P/N)A SHD117236(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4578, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

MBK10

Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

PSMN015-100B

Abstract: PSMN015-100P
Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

atc "100C" capacitor

Abstract: capacitor atc 470 pf 100J ATC100 MIL-PRF-123 100C EIA198
Contextual Info: ATC 100 C Series Porcelain High RF Power Multilayer Capacitors • Case C Size .250" x .250" • Capacitance Range 1 pF to 2700 pF • High Q • Ultra-Stable Performance • Low ESR/ESL • High RF Current/Voltage • High RF Power • High Reliability

SHD114646

Abstract: SHD114646A
Contextual Info: SHD114646 SHD114646A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 697, REV. - HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature AVAILABLE SCREENED TO JAN S LEVEL (SS-100 ; ADD SUFFIX “SS” TO PART NUMBER) DESCRIPTION: A 200 VOLT, 120 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-3/3A PACKAGE.

Contextual Info: SENSITRON SEMICONDUCTOR SHD119534 TECHNICAL DATA DATA SHEET 1180, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage DESCRIPTION: A 100 VOLT, 45 AMP, DUAL POWER SCHOTTKY RECTIFIERS IN A HERMETIC PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE @ TJ = 25 C UNLESS OTHERWISE SPECIFIED.

Contextual Info: New Product SUP90N04-2m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0028 at VGS = 10 V 90 0.003 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC

Contextual Info: GBJ20A thru GBJ20M GLASS PASSIVATED REVERSE VOLTAGE -5 0 to 1000 Volts FORWARD CURRENT - 20 Amperes BRIDGE RECTIFIERS FEATURES • Rating to 1000V PRV • Ideal for printed circuit board hoce r o « MO • Low forv/ard voltage drop, high current capability

Contextual Info: SHD117146 P/N SHD117146(P/N)A SHD117146(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4574, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: Switching Power Supply

Contextual Info: SHD117136 P/N SHD117136(P/N)A SHD117136(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4573, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: Switching Power Supply