ARK VD HE NE Search Results
ARK VD HE NE Datasheets Context Search
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Contextual Info: HOLTEK r r HT7501 Clinical Thermometer * reference for Ewig. Features • • • • • • • • • Single-chip CM O S construction M easurem en t ran ge: +32.00—h43.00°C M easurem en t accuracy: ±0.1°C Resolution: 0.01°C Single 1.5V battery operation |
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HT7501 T7501 32kHz) | |
S600M
Abstract: XR-T5992
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XR-T5992 560kW 330kg 100kg 2N5401 2N5550 2N5401 S600M XR-T5992 | |
IC ap 4600Contextual Info: MOTOROLA Order this document by MC14600/D SEMICONDUCTOR TECHNICAL DATA Low-Power CMOS A L A R M 1C with Horn Driver T he M C 14600 A la rm IC is desig ned to sim p lify the process o f interfacing an alarm level vo lta g e con dition to a p ie zo e le ctric horn a n d/or LED. W ith an extrem e ly |
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MC14600/D IC ap 4600 | |
Contextual Info: RFM • • SC0013A Quartz SA W Frequency Stability Fundam ental Fixed Frequency • Very Low Jitter an d P ow er Consumption • Rugged, Miniature Surface-M ount Case 533.333 MHz DifferentialSinewave Clock This digital clock is designed for use with high speed C PU s and digitizers. |
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SC0013A SC0013A CHP-A-01-122394AC | |
CL40-7612I
Abstract: CL-40
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85VAC 264VAC VDE0871-A E0805/E IEC950, IEC1010 L1950 E136005 41062/LR CL40-7612I CL-40 | |
smd K2F
Abstract: TC8560 SMD code F89 hard disk controller qaf smd mark code F8922
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TC8563AF-89 TC8563AF-89 TC85G0F. 10MHz 16MHz C8563AF-89-24 C8563AF-89-25 60PIN C8563AF-89-26 smd K2F TC8560 SMD code F89 hard disk controller qaf smd mark code F8922 | |
ST412 120
Abstract: ESDI ST412 ESDI controller ADS10C00 F29 SMD esdi western digital
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ADS10C00 ST412, ST412HR 48-BIT 32-BIT 16-BIT W1659 ST412 120 ESDI ST412 ESDI controller F29 SMD esdi western digital | |
Western Digital 320
Abstract: ADS10C00 ST412 X112 SMD HARD DISK CONTROLLER DB07P ST412 120 ST412-type Western Digital Corporation
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ADS10C00 ST412, ST412HR 48-BIT 32-BIT 16-BIT W1659 Western Digital 320 ST412 X112 SMD HARD DISK CONTROLLER DB07P ST412 120 ST412-type Western Digital Corporation | |
Contextual Info: PREPARED BY: DATE: APPROVED BY: DATE: SPEC. No. E D -98179 S H A R f e ' ¡ » t l Ç - . ^ O c t o h e r 14, 1998 ELECTRONIC COMPONENTS GROUP SHARP CORPORATION R E P R E S E ^ J f^ ^ ÿ V p ÎO N SPECIFICATION OPTO-ELECTRONIC D E V I E S DIV. DEVICE SPECIFICATION FOR |
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ED-98179 S11MS7B | |
S3036Contextual Info: 6. Contact Sensor Module 6-1 Outline The contact sensor m odule is an im age reader unit which integrates an im age sensor, lens, light source and control circuit. T he contact sensor m odule has the follow ing fea tures. 1 O ptical design is not necessary |
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CMO 765 RC
Abstract: cmo 765 7 SEGMENT DISPLAY cd 4511 S2559 S2562 256X4 CMOS RAM s5101* ami S5101 B77287 pin diagram decoder 4511 AND
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S2562 S2559 16-Digit S5101 150msec CMO 765 RC cmo 765 7 SEGMENT DISPLAY cd 4511 S2562 256X4 CMOS RAM s5101* ami B77287 pin diagram decoder 4511 AND | |
1E8HContextual Info: M115-2 Series Programmable Master Clock Oscillators T he M î 15-2 is a m e m b e r o f the M 115 series o f hig h -p erfo rm a n ce , digitallyp ro g ra m m e d m aster clock oscillators with frequencies ranging from 6 0 M H z to 1GHz. T h e M l 15 series is a cosl-effective |
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M115-2 100kHz MC10ELT21 1E8H | |
c8050d
Abstract: C 8050 d C8050 C-8050 d 8050 D
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8050/D OC8030 OC8050 OC8050/D MOC8050/D c8050d C 8050 d C8050 C-8050 d 8050 D | |
D3318Contextual Info: PDSP16350 @ M ITEL l/Q Splitter/NCO S E M IC O N D U C T O R Supersedes version in Decem ber 1993 Digital Video & DSP IC Handbook, HB3923-1 T h e P D S P 1 6 3 5 0 p ro v id e s an in te g ra te d s o lu tio n to the need for v e ry accurate, digitised, sine and cosine w aveform s. |
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HB3923-1 PDSP16350 S3711 D3318 | |
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Contextual Info: TN805/TN815-B SCR’s FEATURES • Itrms = 8 A ■ V drm = 400 V to 800 V ■ Ig t ^ 5 mA and 15 mA DESCRIPTION The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology. K These parts are intended for general purpose |
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TN805/TN815-B TN805/TN815-B | |
Contextual Info: AV9170 Integrated Circuit Systems, Inc. ^ Clock Synchronizer and Multiplier Features Description • • • • • • • • • • • The AV9170 g en erates a n o u tp u t clock w hich is sy n c h ro nized to a given c o n tin u o u s in p u t clock w ith zero d elay |
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AV9170 AV9170 AV9170-xxCC8 9170-xxCN8 AV9170-xxCS8 AV9170-xx | |
f0pf
Abstract: KPDB0001EA C0002EA photodiode PN S4753 GaAsP Laser Diode
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780nm B0020EA B0016EA f0pf KPDB0001EA C0002EA photodiode PN S4753 GaAsP Laser Diode | |
TRANSISTOR 5101 FG
Abstract: V 8623 transistor 5101 fg
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FAN8623 TRANSISTOR 5101 FG V 8623 transistor 5101 fg | |
preset 103
Abstract: WD1100-13 WD1100
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WD1100-13 CP-DS/84230/2-84 preset 103 WD1100 | |
TC8563F-55Contextual Info: TOSHIBA UC/UP fcjME D • aD5bS2fl 3T7 »T 0 S 3 HARD DISK CONTROLLER 11 TC8563F-55 Variable Frequency O scillator for Hard Disk 1. G E N E R A L DESCRIPTION The TC8563F-55 is a single chip VFO developed for 45 31 easy realization of a hard disk system together w ith the |
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TC8563F-55 TC8563F-55 T7518. 16MHz TC8563F-55-21 TC8563F-55-22 60PINFP C8563F-55-23 | |
Contextual Info: SMTHBT200 TRISIL FOR LINE CARD PROTECTION FEATURES • BIDIRECTIONAL CROWBAR PROTECTION ■ REPETITIVE PEAK PULSE CURRENT: Ipp = 100 A 10/1000 (is ■ HOLDING CURRENT: lH = 150 mA ■ BREAKDOWN VOLTAGE :200V min ■ BREAKOVER VOLTAGE :26 5 V max DESCRIPTION |
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SMTHBT200 THBT200 CCITTK20: E0433: E0878: | |
Contextual Info: RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features • Wideband Operation 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle |
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RFHA1025 96GHz 215GHz RFHA1025 DS130515 | |
Contextual Info: LPT Series 25 Watts • Triple Output T he LPT S eries of po w e r sup plies is an A C /D C universal input, triple ou tput design offering the latest in high te ch n o lo g y perform ance. This rugged PCB de sig n m easures only 3" x 5" and fea tu res C lass B EMI, high efficiency, |
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Amplifier 10W bluetooth
Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die
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RF3930D RF3930D DS130412 Amplifier 10W bluetooth DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector 3930D SiC diode die |