ARCO TRIMMER TYPE 30 Search Results

ARCO 465 Compression Trimmer Capacitor

Abstract: arco 469 trimmer capacitor arco mica trimmer arco 467 trimmer Arco 426 trimmer arco TRIMMER capacitor 463 trimmer capacitors arco 402 trimmer 3-30 pf arco 4611 capacitor arco TRIMMER capacitor
Contextual Info: Variable Compression Mica Trimmers and Padders Part Number Construction ST 0423 Type1 Numeric Designation2 1. 2. Tyge: ST; PC; C Numeric Designation: Indicates shape, construction, dimensions, and capacitance. STANDARD TRIMMERS These variable compression mica trimming capaci­

arco mica trimmer

Abstract: ARCO 308 m TRIMMERS arco 469 trimmer capacitor mica trimmer capacitor ARCO 465 Compression Trimmer Capacitor arco trimmer 308m arco TRIMMER capacitor Arco 426 trimmer arco 461 mica trimmer ARCO 308
Contextual Info: Variable Compression Mica Trimmers and Padders Part Number Construction ST 0423 Ty p e1 | N um eric Designation2 1. 2. Tyge: ST; PC; C Numeric Designation: Indicates shape, construction, dimensions, and capacitance. STANDARD TRIMMERS These variable compression mica trimming capaci­

F627-8Q1

Abstract: F627-8-Q1 indiana general DVD150T DVd030s indiana general ferrite transformer cores VMP4 Indiana general ferrite F627 DV2820W
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

DV1210

Abstract: DV1205S ARCO 308 DV1230 ym 238 C 458 D DV1202 DV1205W trimmer capacitors arco 402 arco TRIMMER capacitor
Contextual Info: g Applications o Cl DV1205S 400 MHz Oscillator 2 Meter Amplifier 5 W Output ? c\ • ¡8 CJ 1 Parts List Li, 10 turns #22AWG on 1/4" diam eter, close wound L2, 3/4" length of #16 AWG C6, 1.5 to 20 pF, ARCO #402 trimmer c a p a c ito r C7 , 0.9 to 7 pF, ARCO #400 trimm er c a p a c ito r

DV2840S

Abstract: 0Q004
Contextual Info: 5642205 M/A-COM P H I DV2840S INC ^ 85D 00450 SL422DS □G0045Q D 3 * - / '4 2 N-Channel Enhancement - Mode RF Power FETs 175 MHz 2 0 -3 5 V 40 W 10 dB HF/VHF Amplifiers Class A, B or C High Dynamic Range Amp. Package Type S FEATURES • 20:1 VSWR ■ No Thermal Runaway

balun 50 ohm

Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
Contextual Info: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

VRF157FL

Abstract: 2204B MRF157 RL1009-5820-97-D1 Dielectric Laboratories 117nH arco TRIMMER capacitor 262 10E112
Contextual Info: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

VRF154

Abstract: arco mica trimmer wound trifilar 10 turns
Contextual Info: VRF154FL G VRF154FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

Contextual Info: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

MRF240

Abstract: BUY60 MRF240 equivalent
Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD55035 PD55035S
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD55035 PD55035S S2186
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

Contextual Info: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

MRF1517

Abstract: J104 MOSFET j332
Contextual Info: Freescale Semiconductor Technical Data MRF1517 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

2743021446

Abstract: "RF power MOSFETs" A113 AN211A AN215A AN721 MRF1517 MRF1517NT1 MRF1517T1
Contextual Info: Freescale Semiconductor Technical Data MRF1517 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

J104 MOSFET

Abstract: A113 AN211A AN215A AN721 MRF1517N MRF1517NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

MHZ50

Contextual Info: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 4, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

AN721

Abstract: MRF1513 zener diode z10 A113 AN211A AN215A MRF1513NT1 MRF1513T1 cgs diode
Contextual Info: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device