ARCO 423 Search Results

transistor K30A

Abstract: K30A transistor D1143 UNELCO SD1143 M135 33ph Arco 423 K30A
Contextual Info: m 140 Commerce Drive ff M ontgom eryville, PA 18936-1013 H / tS -n a n j T L j - t - r t . « i n llr l/C ff y P ro g re s s P o w e re d b y T e c h no log y S D Ì 143 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR

capacitor 100uF 63V

Abstract: 100uf 63v electrolytic capacitor SD1457 Unelco
Contextual Info: SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 10.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1457 BRANDING SD1457 PIN CONNECTION DESCRIPTION

SD1012-3

Abstract: 1MHz VCO 2 watt carbon resistor M113 SD1012-03 2489E vco 17.5mhz 0060801
Contextual Info: H ftg r» Mnrm S iv n c r o s e m l Progress Powered by Technology 140 Commerce Drive I• I ontgom V I I I M w III W I jr w i l l w I IPA m m 18936-1013 IU w V V I \# I 1# M eryville, Tel: 215 631-9840 ^ S D 1 0 1 2 -3 RF & MICROWAVE TRANSISTORS 130 . 230MHz FM MOBILE APPLICATIONS

Contextual Info: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

rca 0190 transistor

Abstract: RCA-40972 ATC-100-B-150 RCA-40973 RCA-40974 VK-2000 v651 rca transistor ARCO VK2000
Contextual Info: File No. 597 RF Power Transistors Solid State Division 40972 40973 40974 1 .7 5 -, 10-, and 2 5 -W ,1 7 5 -M H z Silicon N -P -N O v e rla y Transistors F o r H igh-Pow er V H F A m p lifie rs Features: • Designed fo r v h f m o b ile tra n s m itte rs ■ 25 W m in . o u tp u t a t 175 M H z ( V ( ;c = 12.5 V )

2N5995

Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
Contextual Info: File No. 454 RF Power Transistors Solid State Division 2N5995 7-W, C W 175-M H z Silicon N-P-N Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: • Low-inductance radial leads ■ Hermetically sealed ceramic-metal package

arco mica trimmer

Abstract: ARCO 308 m TRIMMERS arco 469 trimmer capacitor mica trimmer capacitor ARCO 465 Compression Trimmer Capacitor arco trimmer 308m arco TRIMMER capacitor Arco 426 trimmer arco 461 mica trimmer ARCO 308
Contextual Info: Variable Compression Mica Trimmers and Padders Part Number Construction ST 0423 Ty p e1 | N um eric Designation2 1. 2. Tyge: ST; PC; C Numeric Designation: Indicates shape, construction, dimensions, and capacitance. STANDARD TRIMMERS These variable compression mica trimming capaci­

ARCO 465 Compression Trimmer Capacitor

Abstract: arco 469 trimmer capacitor arco mica trimmer arco 467 trimmer Arco 426 trimmer arco TRIMMER capacitor 463 trimmer capacitors arco 402 trimmer 3-30 pf arco 4611 capacitor arco TRIMMER capacitor
Contextual Info: Variable Compression Mica Trimmers and Padders Part Number Construction ST 0423 Type1 Numeric Designation2 1. 2. Tyge: ST; PC; C Numeric Designation: Indicates shape, construction, dimensions, and capacitance. STANDARD TRIMMERS These variable compression mica trimming capaci­

Contextual Info: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is

Contextual Info: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR

Contextual Info: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR

Power Transformer EE-19

Abstract: EE-19 transformer arco 404 SD2931 VK200 resistor 680 ohm 16-100pF
Contextual Info: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for

RF POWER TRANSISTOR

Abstract: resistor 680 ohm
Contextual Info: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

6W toroid TRANSFORMER

Abstract: SD2921-10 uhf 150w mosfet SD2921 pin configuration 20k ohm potentiometer SC1318
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

SD2941-10

Abstract: EE-19 transformer SD2931-10 VK200
Contextual Info: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower

resistor 680 ohm

Abstract: Power Transformer EE-19 SD2931-10 EE-19 transformer SD2931 VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

Power Transformer EE-19

Abstract: resistor 680 ohm EE-19 transformer SD2931-10 vk200 rf choke SD2931 VK200
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

300 to 50 Ohm RF transformer

Abstract: MHz-150W resistor 680 ohm
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

Contextual Info: SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor Datasheet - production data Description The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V DC large

Bead 220 ohm 2.5A

Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Contextual Info: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

arco mica trimmer

Abstract: mica trimmers capacitors mica trimmer capacitor Arco 420 Compression mica trimmers trimmer PT 15 arco mica trimmer 30 ARCO TRIMMERS pt 35c capacitor trimmer variable arco 404
Contextual Info: n VARIABLE COMPRESSION MICA TRIMMERS AND y .y f a ? : * / Specifications O PER A TING TEM PERA TU R E: - 3 5 * C to ± 8 5 °C . MAXIM UM CAPACITANCE: Equal to. or greater than the value indicated in the table When the adjusting screw is al a tighi position with tight being defined as

PT9734

Abstract: arco 404 PT9730 Arco 403 PT9731 ARCO 0.1 Z PT9732 PT8731 9730 motorola SO 402 NH
Contextual Info: MOTOROLA SC X S T R S /R F MbE D m b 3 b ? 2 S 4 00=15143 S MOTOROLA “T SEMICONDUCTOR - 3 ^ O ( TECHNICAL DATA PT973p Series The RF Line V H F Pow er Transistors . . . designed primarily for wideband, large-signal output amplifier stages in the 30-200 MHz frequency range.

MPXC12DTI

Contextual Info: Pressure Freescale Semiconductor MPXC12DT1 Rev 0, 11/2010 10 kPa Uncompensated Silicon Pressure Sensor MPXC12DT1 Freescale Semiconductor has developed a low cost, high volume, miniature pressure sensor package which is ideal as a sub-module component or a

Contextual Info: Freescale Semiconductor Technical Data MPXC2011DT1 Rev 4, 05/2005 High Volume Sensor for Low Pressure Applications MPXC2011DT1 MPXC2012DT1 Freescale Semiconductor has developed a low cost, high volume, miniature pressure sensor package which is ideal as a sub-module component or a