ARAY RESISTOR Search Results

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Contextual Info: CY8C23433, CY8C23533 PSoC Mixed-Signal Aray Features • ■ Powerful Harvard Architecture Processor ❐ M8C processor speeds to 24 MHz ❐ 8x8 multiply, 32-bit accumulate ❐ Low power at high speed ❐ 3.0 to 5.25V operating voltage ❐ Industrial temperature range: -40°C to +85°C

EI 33

Abstract: Raytheon Company High Flow With Cooling Ring UP 8500 W ML-7479A 3,3 kw MHz relay industrial tube company ei-33 d
Contextual Info: The Machiett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 IS S U E D 4-68 Tel. 203-348-7511 • TW X 710-474-1744 m M <&CHLÈT£> G e n e ra l Purpose Triode 55 kW CW D E S C R IP T IO N The M L-7479A is a general-purpose vapor-cooled triode

photodiode application luxmeter

Abstract: IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter
Contextual Info: Application Circuit Examples Low noise light-sensitive preamplifier -M 5 V Used in receivers for spatial light transm ission and optical rem ote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.

RJMG16XXX8XX1XX

Abstract: 0-KN-21 RJMG16XXX 2t512 NE045
Contextual Info: I _ A_ I_ _ _ _ _ _ _ _ _ CUSTOMER DRAWING T K a d a e u m e n t ia t h a prop e rty a f A m p h « n o l C a rp a ro tio n a n d Ta dtt4iV*rod a n ih a c x p r n a s candrtÎDn that it b not ta b e dia clo se d , rn p ra d u co d o r ucfid, in w holû o r In port, fo r m a n u fa c t u ra n r so la h y a n y o n a o t h e r th a n

lm733

Abstract: light to voltage converter from luxmeter photodiode application luxmeter LM733P
Contextual Info: Application Circuit Examples 1 Low noise light-sensitive preamplifier Used in receivers for spatial light transm ission and optical remote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.

diode B14A

Abstract: B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode
Contextual Info: MIL SPECS IC|D00D15S 0D00L.S2 S | « 1^ - 19500/91 31^ A»eod»cnt 1 1 M y i960 KXLITARI STFEUFICATIO SDdCOOTWCTOT DEVICE DIODE, SILICOTI, POWER RECTIFUR TXTE W2153 Thla Ancndment forme a part of Military ' Specification KIL-S-19500/9HS1kC j, 2 No t 59 Page 1, paragraph 1.1 table., (l (surge) column: Delete "50" pertaining to

AT17C512-10PI

Abstract: ATMEL Application Note EEPROM SOIC TCDF ATMEL 940 Atmel 826 lv512 AT17LV010-10JI AT17 AT40K ATDH2200E
Contextual Info: Features • EE Programmable 524,288 x 1- and 1,048,576 x 1-bit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays FPGAs • In-System Programmable via 2-wire Bus • Simple Interface to SRAM FPGAs • Compatible with Atmel AT6000, AT40K FPGAs, Altera FLEX Devices, Lucent ORCA®

SRAM sheet samsung

Contextual Info: Preliminary K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. 0.0 History Draft Date 1. Initial document. 2. Add Icc & Isb November, 25 2001 March,25 2002 Remark Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K7H163654A-FC20

Abstract: K7H163654A-FC25 K7H163654A-FC30
Contextual Info: K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. 2. Add Icc & Isb November, 25 2001 March,25 2002 Preliminary Preliminary 1.0 1. Final SPEC release 2. Modify thermal resistance

Contextual Info: Preliminary K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. 0.0 History Draft Date 1. Initial document. November, 25 2001 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

Contextual Info: 24FC32 M icrochip 32K 5.0V 1 MHz CMOS Serial EEPROM FEATURES PACKAGE TYPE • Voltage operating range: 4.5V to 5.5V - Maximum write current 3 mA at 5.5V - Maximum read current 150 jiA at 5.5V - Standby current 1 |iA typical • 1 MHz SE2.bus two wire protocol

IR 10D 8A

Contextual Info: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 Preliminary b2 SRAM QDRTM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control

K7Q161882A

Abstract: K7Q161882A-FC10 K7Q161882A-FC13 K7Q161882A-FC15 K7Q163682A K7Q163682A-FC10 K7Q163682A-FC13 K7Q163682A-FC15 din 6p IR 10D 9F
Contextual Info: K7Q163682A K7Q161882A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. May, 22 2001 Advance 0.1 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change

K7Q161862B-EC16

Abstract: ntram
Contextual Info: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K7Q161852A

Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
Contextual Info: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control

K7Q161864B-FC16

Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
Contextual Info: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

Contextual Info: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.

Contextual Info: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.

Contextual Info: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final 1.1 1. Added the Part no. of Pb Free Package on page.2

Contextual Info: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5. 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA

Contextual Info: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA

Contextual Info: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.

Contextual Info: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA

IR 10D 8A

Abstract: K7Q163682A-FC10
Contextual Info: K7Q163682A K7Q161882A 512Kx36 & 1Mx18 Preliminary b2 SRAM QDRTM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. May, 22 2001 Advance 0.1 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change