ARAY Search Results

Contextual Info: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050SR3-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan Akita Prefectural Industrial Technology Center,

led lighting

Abstract: OPT605
Contextual Info: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050SR2-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan Akita Prefectural Industrial Technology Center,

Contextual Info: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62783AP/AF TD62784AP/AF 8-channel High-Voltage Source Driver The TD62783AP/AF Series drivers are composed of eight source current Transistor Arays. These drivers are specifically designed for fluoBScent

HIRD BROWN

Abstract: lecroy lc684
Contextual Info: designfeature B y V Laksh m in arayan an . Centre fo r Developm ent n f Telematics VCE BREAKDOWN IS THE MAJOR CAUSE OF SEMICONDUCTOR-DEVICE FAILURE IN INDUCTIVE-LOAD CIRCUITS, BUT YOU CAN TAKE NUMEROUS STEPS TO PROTECT DEVICES FROM EXCESSIVE STRESS. Techniques minimize

Contextual Info: K /D iod es ITZ5.6H ITZ5.6H Silicon Epitaxal Planar Zener Diode Aray • • y>TV \r a H /D im e n s io n s Unit : mm 1) (S IP 9 p in )0 2) K = li> ^ 'f 3) Zf-Z'&Zo $)'S O • Features +l 1) L e a de d typ e (SIP 9pin). 2) 8 e le m e n ts w ith type. ca th od e

by118

Contextual Info: CY8C23433, CY8C23533 PSoC Mixed-Signal Aray Features • ■ Powerful Harvard Architecture Processor ❐ M8C processor speeds to 24 MHz ❐ 8x8 multiply, 32-bit accumulate ❐ Low power at high speed ❐ 3.0 to 5.25V operating voltage ❐ Industrial temperature range: -40°C to +85°C

Contextual Info: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050DW3-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan Akita Prefectural Industrial Technology Center,

Contextual Info: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050DW2-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan

K7Q161852A

Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
Contextual Info: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control

10D-11

Abstract: K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20
Contextual Info: K7R163682B K7R161882B K7R160982B 512Kx36 & 1Mx18 & 2Mx9 QDR TM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17, 2002 Advance 0.1 1. Change the Boundary scan exit order.

K7Q161864B-FC16

Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
Contextual Info: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K7M643635M-Q

Contextual Info: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz

K7N161801A

Abstract: K7N163601A
Contextual Info: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.

D0-35

Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
Contextual Info: K7J163682B K7J161882B 512Kx36 & 1Mx18 DDR II SIO b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 1. Change the JTAG Block diagram Dec. 26, 2002 Preliminary

diodo MSC

Abstract: Diodo in 5004 DIODO 4001 pj 325c diodo rp 104 38510/325 cd 4061 P4 DIODO 54LS373 k diodo 541
Contextual Info: KIL-M-38510/325C 24 Septem ber 1987 w n re n m rc NIL-M-38510/325B 15 A p r il 1985 MILITARY SPECIFICATIO N M ICROCIRCUITS, D IG IT A L , 8 1POLAR, LON-POHER SCHOTTKY TTL, F L IP - F L O P S , CASCADABLE. MONOLITHIC SILICO N T h is s p e c i f i c a t i o n 1s approved f o r us* by a l l D e p art­

CX9010-N031

Abstract: Beckhoff Ek1100 ES3004 bc515 hengstler 890 IL2301bxxx Fisher ROC 107 modbus CU2508 KL2541 HEIDENHAIN EnDat 2.1
Contextual Info: BECKHOFF New Automation Technology Ürünlere Genel Bakış Endüstriyel PC Gömülü PC Lightbus I/O Terminalleri Fieldbus Kutusu Sürücü Teknolojisi PC-Fieldbus kartları, Ağ anahtarları 2 Automation Motion I/O IPC Beckhoff Ürünlerine Genel Bakış | Bu katalog, Endüstriyel bilgisayarlar, saha haberleşmesi, sürücü teknolojileri, otomasyon yazılımları

CTS RESISTOR ARAY

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

NC-2H

Abstract: K7B161825A K7B163225A K7B163625A
Contextual Info: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

K7N161801A

Abstract: K7N163201A K7N163601A
Contextual Info: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

Contextual Info: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu MB81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed or mainframe

Contextual Info: FUJITSU MICROELECTRONICS 47E D Marchi 990 Edition 2.2 DATA SHEET 3 7 4 ^ 2 OOnSll 1 • FUJITSU MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256 is a CMOS, fully decoded dynamic RAM organized as

Contextual Info: FUJITSU November 1990 Edition 2.0 DATA SHEET M B 8 1 C 1 0 0 1 A - 70U-80U ‘ 10L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CM OS 1M x 1 B it Nibble Mode DRAM The Fujitsu M B81C1001A is a CM O S, fully decoded dynam ic RAM organized as 1,048,576 words x 1 bit. The M B81C1001A has been designed for mainframe

mb81c4256A-60

Contextual Info: November 1990 Edition 3.0 DATA SHEET • FUJITSU M B 8 1C4256A-60/-70/-80/-10 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256A is a CMOS, fully decoded dynamic RAM organized as 262,144 words x 4 bits. The MB81C4256A has been designed for mainframe

Contextual Info: February 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe