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    APT84F50L Search Results

    APT84F50L Datasheets (1)

    Microsemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT84F50L
    Microsemi Power FREDFET; Package: TO-264 [L]; ID (A): 84; RDS(on) (Ohms): 0.065; BVDSS (V): 500; Original PDF 252.61KB 4
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    APT84F50L Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT84F50L

    Power MOS 8 FREDFET N-Channel 500V 84A 3-Pin TO-264 - Rail/Tube (Alt: APT84F50L)
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    APT84F50L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ultra fast recovery diode 500V

    Contextual Info: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low


    Original
    apt84f50b2apt84f50l320nso-264+2o-247ultra fast recovery diode 500v PDF

    APT84F50B2

    Abstract: APT84F50L MIC4452
    Contextual Info: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low


    Original
    apt84f50b2apt84f50l320nso-264+2o-247mic4452 PDF

    Contextual Info: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    apt84f50b2apt84f50l320nso-264+1o-247 PDF

    920-11

    Contextual Info: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    apt84f50b2apt84f50l320nso-264+2o-247920-11 PDF