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    APT80GA90S Search Results

    APT80GA90S Datasheets (1)

    Microsemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT80GA90S
    		Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 80; Original PDF 215.81KB 6
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    Microchip Technology Inc

    Microchip Technology Inc APT80GA90S

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    APT80GA90S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT80GA90B APT80GA90S PDF

    APT80GA90S

    Abstract: APT80GA90B MIC4452
    Contextual Info: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT80GA90B APT80GA90S APT80GA90S APT80GA90B MIC4452 PDF

    Contextual Info: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT80GA90B APT80GA90S switc16) PDF