APT801 Search Results

APT8014L2FLL

Abstract: MAX7238
Contextual Info: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8015JVFR

Abstract: APT8015
Contextual Info: APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

7106

Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
Contextual Info: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8018L2VFR

Contextual Info: APT8018L2VFR 800V 43A POWER MOS V FREDFET 0.180Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT8014L2FLL

Abstract: APT8014L2FLLG
Contextual Info: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

Contextual Info: ADVANCED PO W ER a Te c h n o l o g y APT8018JN ISOTOP' POWER MOS IV® 800V 40A 0.18Í2 S Ù " U L DIE Recognized" File No. E145592 S SINGLE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced O D O P O W E Ii Te c h n o l o g y APT801R2BNR 800V 9.0A 1.20Í2 APT801R4BNR 800V 8.5A 1.40Q S POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS APT801R2BNR Parameter 800 Drain-Source Voltage

Contextual Info: APT8011JLL 800V 51A 0.110W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

APT801R2cN

Abstract: C 632 S1M
Contextual Info: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q

7516-D

Contextual Info: ADVANCED POWER TECHNOLOGY P D 2 /-HL J |£ ) G(2) <>^ / X /^ / kX / 4 T (/ 1 i Ä V / / ôs<2> V \ l i / ^ P P ^ f ^ I / w IW C b D B ^ g POW ER T'S^-15 : Te c h n o l o g y . APT8016DFN 800V 47.0A 0.16 ¿2 APT7516DFN 750V 47.0A 0.16 l i POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS

Contextual Info: APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Diode 188

Abstract: APT8016DFN APT7516DFN 7516-D 47Amps
Contextual Info: ADVANCED MIE POWER TECHNOLOGY 1 oaSTiai DÜDOS'IM S32 • I AVP ■ ADVANCED F O M fER _T-3>°h$„ I Techno lo g y O D 2> 0<2 à (fò APT8016DFN 800V 47.0A 0.16 Ï2 APT7516DFN 750V 47.0A 0.16 ¿1 0 3(2 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS

Contextual Info: O A d van ced po w er Te c h n o l o g y D APT8018JN As 800V 40A 0.18Q 5 M " U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT8015JVR ADVANCED POW ER Te c h n o l o g y 800V 44A 0.150Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8014L2FLL 800V 52A 0.140W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT8018JNFR

Contextual Info: A d va n ced P o w er Te c h n o l o g y APT8018JNFR 800V 40A 0.18£2 ISOTOP S M "UL Recognized" File No. E145592 S POWER MOS IVe AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd ’dm V GS

Contextual Info: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

7238 diode

Abstract: apt30df60
Contextual Info: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

Contextual Info: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

Contextual Info: APT8014JLL 800V 42A 0.140Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

apt8015jvr

Contextual Info: APT8015JVR 44A 0.150Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

7103

Abstract: 52AJ
Contextual Info: APT8014L2LL 800V 52A 0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: APT8014JLL 800V 42A 0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN