APT46 Search Results

APT10035LLL

Abstract: APT46GA90JD40 MIC4452 max4170
Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

applications of choke coil

Abstract: APT46-331M15-20-PF
Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-331M15-20-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-152M6-20-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Ultrafast Recovery Rectifier Bridge

Abstract: APT10035LLL APT46GA90JD40 MIC4452
Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-222M5-20-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-102M8-10-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-221M20-10-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

APT46-331M15-10-PF

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-331M15-10-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-151M25-10-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Differential Mode Choke Coils AP Series APT46 Type APT46-681M10-20-PF Product Lifecycle Stage PROD With/Without Base No Specification Summary/Applications/Feature Mounting Method Flag No Shape Summary Radial-Lead

Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system

APT31-330M25-10

Abstract: APT31-680M15-10 Inductor choke TDK Cores APT31-470M20-10 AP10T22X10X14 AP10T31X13X19 AP10T38X13X22 AP10T46X20X27 APT22-471M4-10
Contextual Info: Amorphous Cores AP Series For Smoothing Choke 10 to 200+ W Output AP SERIES/CORE FEATURES • A gap has been installed in the toroidal core to improve handling power by 50% per volume. • Excellent direct current superposition characteristics. • The size can be more compact than no gap toroidal core.