APT20M45 Search Results
APT20M45 Datasheets (15)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT20M45BNFR | Advanced Power Technology | Power MOS IV | Scan | 195.6KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BNR | Advanced Power Technology | Power MOS IV - N-Channel Enhancement Mode Low Voltage Power MOSFETS | Scan | 188.81KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BVFR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 32.89KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BVFR | Advanced Power Technology | POWER MOS V 200V 56A 0.045 Ohm | Original | 97.31KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BVFRG |
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Power FREDFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; | Original | 97.3KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 96.44KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BVR |
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Power MOS V MOSFET | Original | 94.7KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BVR |
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4-to-16 line decoder/demultiplexer with input latches | Original | 73.01KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45BVRG |
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Power MOSFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; | Original | 94.7KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45SVFR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 35.85KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45SVFR |
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Power MOS V FREDFET | Original | 100.24KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45SVFRG |
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Power FREDFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; | Original | 100.24KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45SVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 99.58KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M45SVR |
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Power MOS V MOSFET | Original | 97.59KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT20M45SVRG |
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Power MOSFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; | Original | 97.58KB | 4 |
APT20M45 Price and Stock
Microchip Technology Inc APT20M45BVRGMOSFET N-CH 200V 56A TO247 |
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APT20M45BVRG | 21 Weeks | 50 |
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APT20M45BVRG | 69 |
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Microchip Technology Inc APT20M45SVRGMOSFET N-CH 200V 56A D3PAK |
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APT20M45SVRG | Tube | 50 |
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APT20M45SVRG |
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APT20M45SVRG | 22 Weeks | 50 |
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APT20M45SVRG |
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Microchip Technology Inc APT20M45SVFRGMOSFET N-CH 200V 56A D3PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT20M45SVFRG | Tube | 40 |
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APT20M45SVFRG | Bulk | 26 Weeks | 40 |
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APT20M45SVFRG |
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APT20M45SVFRG | Bulk | 40 |
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APT20M45SVFRG | Tube | 26 Weeks |
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APT20M45SVFRG |
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APT20M45SVFRG | 1 |
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APT20M45SVFRG | Tube | 28 |
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APT20M45SVFRG | 40 |
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APT20M45SVFRG |
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Microchip Technology Inc APT20M45BVFRGMOSFET N-CH 200V 56A TO247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT20M45BVFRG | Tube | 50 |
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APT20M45BVFRG | Bulk | 26 Weeks | 50 |
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APT20M45BVFRG |
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APT20M45BVFRG | Bulk | 50 |
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APT20M45BVFRG | Tube | 26 Weeks |
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APT20M45BVFRG |
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Microchip Technology Inc APT20M45DVRMOSFET MOS 5 200 V 45 mOhm DIE, Projected EOL: 2044-04-30 - Contact for Pricing |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT20M45DVR | 20 Weeks |
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APT20M45 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT20M45BNFR APT20M60BNFR APT20M45/20M60BNFR O-247AD | |
APT20M45BVRContextual Info: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. |
Original |
APT20M45BVR O-247 O-247 APT20M45BVR | |
20M60BNFRContextual Info: A d van ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV< 200V 58A 200V 50A 0.045Í2 0.060Q A V A LA N C H E RATED FR EDFET N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT20M45BNFR APT20M60BNFR O-247AD 20M60BNFR | |
APT20M45SVFRContextual Info: APT20M45SVFR 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT20M45SVFR APT20M45SVFR | |
APT20M45SVFRContextual Info: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
Original |
APT20M45SVFR MIL-STD-750 APT20M45SVFR | |
TL 084L
Abstract: APT20M45BNR APT20M60BNR 20M60
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OCR Scan |
APT20M45BNR APT20M60BNR O-247AD CI00m27 TL 084L 20M60 | |
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O S APT20M45BNR 200V APT20M60BNR 200V 58A 0.04512 50A 0.0600 POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT20M45BNR APT20M60BNR APT20M45BNR APT20M60BNR MIL-STD-750 773nH, O-247AD | |
Contextual Info: APT20M45BVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 56A 0.045Ω 200V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT20M45BVFR O-247 O-247 | |
Contextual Info: APT20M45SVFR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V POWER MOSV i 56A 0.0450 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
OCR Scan |
APT20M45SVFR MIL-STD-750 | |
Contextual Info: A dvanced P ow er Te c h n o lo g y o» APT20M45SNR 200V O S POWER MOS 58A 0.0450 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tc = 25°C unless otherwise specified, MAXIMUM RATINGS Symbol V Parameter APT20M45SNR UNIT |
OCR Scan |
APT20M45SNR APT20M45SNR | |
20M60
Abstract: APT20M60BNFR 20M60BN GD142 APT20M45BNFR BVJ 47 20M60BNFR
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OCR Scan |
APT20M45BNFR APT20M60BNFR O-247AD 20M60 20M60BN GD142 BVJ 47 20M60BNFR | |
Contextual Info: APT20M45SVR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
OCR Scan |
APT20M45SVR | |
APT20M45B
Abstract: APT20M45BVR Diode 224
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Original |
APT20M45BVR O-247 APT20M45B Diode 224 | |
APT20M40JN
Abstract: 20M40JN apt20m45j AC3S 20M45
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OCR Scan |
000105b APT20M40JN APT20M45JN E145592 20M40JN 20M45JN apt20m45j AC3S 20M45 | |
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3055t
Abstract: diode zd 22
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OCR Scan |
APT20M45SVFR APT20M45SVFR 3055t diode zd 22 | |
Contextual Info: APT20M45BVFR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, |
OCR Scan |
APT20M45BVFR O-247 APT20M45BVFR | |
Contextual Info: APT20M45SVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT20M45SVFR | |
APT20M45SVRContextual Info: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. |
Original |
APT20M45SVR APT20M45SVR | |
Contextual Info: A dvanced POW ER TECHNOLOGY * O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV 58A 0.0450 50A 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter |
OCR Scan |
APT20M45BNR APT20M60BNR O-247AD APT20M45/20M60BNR | |
0502045Contextual Info: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR sBWER MOS IV'01 200V 58A 0.0451» 200V 50A 0.06012 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d . |
OCR Scan |
APT20M45BNFR APT20M60BNFR APT20M45BNFR APT20M45/20M60BNFR O-247AD 0502045 | |
Contextual Info: A dvanced APT20M45BVR pow er Te c h n o lo g y 9 200V 56A 0.045Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
OCR Scan |
APT20M45BVR O-247 APT20M45BVR | |
APT20M45SVRContextual Info: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. |
Original |
APT20M45SVR APT20M45SVR | |
Contextual Info: APT20M45BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
OCR Scan |
APT20M45BVR O-247 | |
APT20M45BVFRContextual Info: APT20M45BVFR 200V POWER MOS V 56A 0.045Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT20M45BVFR O-247 O-247 APT20M45BVFR |