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    13GP12

    Abstract: APT13GP120BD1 13gp120bd1
    Contextual Info: APT13GP120BD1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		apt13gp120bd1o-247t0-24713gp12+113gp120bd1 PDF

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Contextual Info: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced Ā“Miller CapacitanceĀ” - this provides for increased noise and spurious turn-on immunity and eliminates the


    Original     		apt40gp60b2d1o-247apt25gp120b2d1apt35gp120b2d2+12apt45gp120b2d2apt50gp60b2d2apt65gp60l2d2264-maxtm600 volt mosfet1200 volt mosfetto247 package dissipation125ocapt13gp120bapt13gp120kapt15gp60kmil-prf19500 PDF