APT10M11JVR Search Results
APT10M11JVR Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT10M11JVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 72.69KB | 4 | ||
| APT10M11JVR | Microsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 144A ISOTOP | Original | 76.16KB | |||
| APT10M11JVRU2 | Advanced Power Technology | ISOTOP Boost chopper MOSFET Power Module | Original | 744.59KB | 7 | ||
| APT10M11JVRU2 | Microsemi | ISOTOP Boost chopper MOSFET Power Module | Original | 718.45KB | 7 | ||
| APT10M11JVRU2 | Microsemi | FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 142A SOT227 | Original | 8 | |||
| APT10M11JVRU3 | Advanced Power Technology | ISOTOP Buck chopper MOSFET Power Module | Original | 744.87KB | 7 | ||
| APT10M11JVRU3 | Microsemi | ISOTOP Buck chopper MOSFET Power Module | Original | 718.81KB | 7 | ||
| APT10M11JVRU3 | Microsemi | FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 142A SOT227 | Original | 8 |
APT10M11JVR Price and Stock
Microchip Technology Inc APT10M11JVRU2- Rail/Tube (Alt: APT10M11JVRU2) |
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APT10M11JVRU2 | Tube | 20 Weeks | 32 |
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APT10M11JVRU2 | 50 |
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APT10M11JVRU2 | 20 Weeks |
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APT10M11JVRU2 |
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APT10M11JVRU2 | 32 |
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APT10M11JVRU2 |
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APT10M11JVRU2 | 3,956 |
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Microchip Technology Inc APT10M11JVRU3- Rail/Tube (Alt: APT10M11JVRU3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT10M11JVRU3 | Tube | 20 Weeks | 32 |
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APT10M11JVRU3 | 21 |
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APT10M11JVRU3 | 20 Weeks |
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APT10M11JVRU3 |
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APT10M11JVRU3 | 32 |
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APT10M11JVRU3 |
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APT10M11JVRU3 | 3,404 |
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APT10M11JVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
isotop mosfet 100V
Abstract: APT10M11JVRU2
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apt10m11jvru2ot-227isotop mosfet 100v | |
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Contextual Info: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt10m11jvrot-227e145592 | |
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Contextual Info: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch |
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apt10m11jvru2ot-227 | |
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Contextual Info: A dvanced P ow er T e c h n o lo g y 9 APT10M11JVR 100V 144A 0.01m POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
apt10m11jvrot-227apt10m11 | |
MOSFET Module 100v 1000A
Abstract: APT10M11JVRU3 SOT-227 heatsink
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apt10m11jvru3ot-227mosfet module 100v 1000asot-227 heatsink | |
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Contextual Info: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch |
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apt10m11jvru2ot-227 | |
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Contextual Info: APT10M11JVR ADVANCED W 7Æ P o w e r Te c h n o l o g y ioov i44a 0 .01 m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
apt10m11jvrot-22745nute145592 | |
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Contextual Info: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Features Power MOS V® MOSFETs - Low RDSon |
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apt10m11jvru3ot-227 | |
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Contextual Info: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon |
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apt10m11jvru3ot-227 | |
APT10M11JVRU3
Abstract: MOSFET Module 100v 1000A
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apt10m11jvru3ot-227mosfet module 100v 1000a | |
APT10M11JVRU2
Abstract: MOSFET Module 100v 1000A
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apt10m11jvru2ot-227mosfet module 100v 1000a | |
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Contextual Info: • R A dvanced W 'æ APT pow er Te c h n o l o g y ' io o v 10 M 11 JV R i 44 a 0.011 q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
ot-227apt10m11e145592 | |
SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
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10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
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des69110f-asmps 1000w600v 300a igbt dc to dc boost converter+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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mil-prf-19500iso90015017bvr40814+8 | |
sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
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sot-227 footprintvrf2933sp6-parf1511+6 | |
I44AContextual Info: • R A dvanced r M po w er Tec h n o lo g y APT10M11J VR ioov i44a 0.011 q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
apt10m11jot-227apt10m11jvre145592+1 | |
mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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mj 1504 transistor equivalentarf450fredfetstransistors mj 1504+6 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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mil-prf-19500iso9001apt6015lvr5020bn+8 | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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apt100gf60lr1200 volt mosfetfredfetssot-227 footprint+6 | |
VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
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ms5-001-14vrf2933flvrf164flarf463ap1+2 | |