APT10026 Search Results

APT10026JFLL

Contextual Info: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

tc 7680

Contextual Info: APT10026L2FLL 1000V 38A 0.260W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT10026RKVR 1000V 0.48A 26.0W POWER MOS V TO-220 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10026JFLL 1000V 30A 0.28 Ω POWER MOS 7 R FREDFET VDSS ID SO 27 -T 2 "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT10026JN

Contextual Info: A dvanced P ow er T e c h n o lo g y 9 APT10026JN 1000V 33A 0.26£2 5 W 'U L Recognized" File No. E145592 S ISOTOP» POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'd W

tc 7680

Abstract: fast diode SOT-227
Contextual Info: APT10026JFLL 1000V 30A 0.140W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

APT10026JFLL

Contextual Info: APT10026JFLL 1000V 30A 0.28 Ω POWER MOS 7 R FREDFET Symbol VDSS ID SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT10026JNR ISOTOP® 1000V 33A 0.26Q S Ú "UL Recognized" File No. E145592 S POWER MOS IV« AVALANCHE RATED ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: •R F j M AD VA NC ED po w er T e c h n o lo g y APT10026JN 1000V 33A 0.26Í2 S Ù " U L Recognized" File No. E145592 S ISOTOP' POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS

APT10026JNR

Abstract: APT10026
Contextual Info: A d va n ced R o w er Te c h n o l o g y APT10026JNR 1000V ISOTOP® 33A 0.26Q "UL Recognized" File No. E l45592 S POWER MOS IV< AVALANCHE RATED ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified.

tc 7680

Contextual Info: APT10026L2LL 1000V 38A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: APT10026JLL 1000V 30A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: ADVANCED PO W ER Te c h n o l o g y APT10026JNR 1000V 33A 0.26a ISOTOP POWER MOS IV' "UL Recognized" File No. E145592 S AVALANCHE RATED ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D 'dm V GS V GSM

APT10026L2FLL

Abstract: DSA003654
Contextual Info: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT10026JLL 1000V 30A 0.260Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

diode on 026 LG

Abstract: APT10026JNR
Contextual Info: A dvanced P o w er r Te c h n o l o g y s iw m { APT10026JNR ISOTOP® 1000V t o 33A 0.26Í2 "UL Recognized" File No. E145592 S POWER MOS IVe CKAGE ¡2 N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS •o 'dm V GS V GSM

APT10026JN

Contextual Info: S S D D G G 27 2 T- SO APT10026JN 1000V 33A 0.26Ω S "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

Contextual Info: APT10026RKVR 1000V 0.48A 26.0W POWER MOS V TO-220 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

10026JN

Abstract: APT10026JN
Contextual Info: O A dvanced P o w er Te c h n o l o g y D r »J APT10026JN ó s ^ ISOTOP* 1000V 33A 0.26H "UL Recognized" File No. E145592 (S POWER MOS ¡V( N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'o W 'lm V GS PD T J 'T STG All Ratings: T c = 25°C u nless otherw ise specified.

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

LD 1610

Abstract: APT9026DFN SML10026DFN APT10026DFN LE17 SML9026DFN
Contextual Info: SEMELAB PLC bOE D • Ô1331Ô? □□□□STO m i 7GT « S f l L B MOS POWER 4 iFF i mi SEME 'T * 3 ° r - 2 .^ LAB SML9026DFN 900V 36.0A 0.260 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ’dm V GS PD T J 'T STG