APPLICATIONS OF SINGLE STAGE COMMON EMITTER Search Results

nano*ammeter

Abstract: LM1107 nanoammeter SQUARE WAVE TO SINE WAVE schematic diagram basic dc nanoammeter diagram modified sine wave inverter 12v circuit diagram thyristor inverter 2N3252 LM4250 POWER SUPPLY SWITCHING DOWN STEP
Contextual Info: National Semiconductor Application Note 71 George Cleveland July 1972 Introduction Referring to Figure 1, Q1 and Q2 are high current gain lateral PNPs connected as a differential pair. R1 and R2 provide emitter degeneration for greater stability at high bias currents. Q3 and Q4 are used as active loads for Q1 and Q2 to

GT60N321

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High Power Switching Applications The 4th Generation • FRD Included Between Emitter and Gollector • Enhancement-Mode • High Speed • Low Saturation Voltage IGBT : tf = 0.25 µs typ. (@IC = 60 A)

gt60n321

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

Contextual Info: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications • FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs typ. (IC = 60 A)

gt60n321

Abstract: GT60
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

gt60n321

Abstract: TOSHIBA IGBT DATA BOOK GT60N32
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High Power Switching Applications The 4th Generation • • • • FRD Included Between Emitter and Gollector Enhancement-Mode High Speed IGBT : tf = 0.25 µs typ. (@IC = 60 A)

GT60N321

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm • FRD included between emitter and collector · Enhancement-mode · High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

Contextual Info: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is

GT40Q323

Contextual Info: GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector

GT60M323

Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector

GT60N32

Abstract: GT60N321
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

gt40q322

Contextual Info: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector • The 4th generation

GT50G321

Contextual Info: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 Fourth Generation IGBT Current Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A)

GT60M323

Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector

ecl 806

Abstract: CML ECL termination PLE 2 - 25va Vterm pecl logic voltage levels
Contextual Info: Application Note 806 LVPECL, PECL, ECL Logic and Termination March 2009 by: Ken Johnson and Bob Gubser ABSTRACT This application note will highlight characteristics of Pletronics Low Voltage Positive Emitter Coupled Logic LVPECL frequency control products and provide guidance for

2N3866 MOTOROLA

Abstract: LT1719 so-8 2N3866 pin diagram 2N3866 MOTOROLA s parameters 1N5711 2N3866 LT1719 LT1719CS8 LT1719IS8 TC02
Contextual Info: LT1719 4.5ns Single/Dual Supply 3V/5V Comparator with Rail-to-Rail Output U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4.2mA at 3V Separate Input and Output Power Supplies Output Optimized for 3V and 5V Supplies

5v input 3v output

Abstract: 1N5711 2N3866 LT1719 LT1719CS8 LT1719IS8 TC02 Transistor 2N3866 10h124
Contextual Info: Final Electrical Specifications LT1719 4.5ns Single/Dual Supply 3V/5V Comparator with Rail-to-Rail Output September 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4.2mA at 3V Separate Input and Output Power Supplies

GT60N32

Abstract: gt60n321 GT60 IC601
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)

GT40Q322

Contextual Info: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector

GT60N322

Contextual Info: GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.4 V (typ.) (IC = 60 A) • FRD included between emitter and collector

GT60M323

Abstract: GT60M
Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector

GT50G321

Contextual Info: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 Fourth Generation IGBT Current Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A)

GT60M323

Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector

041 DIODE

Abstract: GT60N322
Contextual Info: GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.4 V (typ.) (IC = 60 A) • FRD included between emitter and collector