APPLICATION OF COMMON EMITTER AMPLIFIER Search Results

smd transistor 712

Abstract: transistor Common Base amplifier class A push pull power amplifier NTC Thermistor smd Fixed resistor 10 k ntc thermistor SMD TRANSISTOR Re computation screw for pcb transistor NTC 1,0 design a common emitter amplifier with a voltage
Contextual Info: Application Note Vishay BCcomponents NTC Temperature Compensation of a Common Emitter Voltage Amplifier INTRODUCTION NTC thermistors are still widely used for temperature compensation of electronic circuits. In the “hardware compensation method” the negative

norton amplifier

Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output

SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Contextual Info: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are

KTC4079

Contextual Info: SEMICONDUCTOR KTC4079 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E FEATURE B M M ・High Power Gain : Gpe=29dB Typ. (f=10.7MHz) D J 3 1 G A 2 MAXIMUM RATING (Ta=25℃) RATING UNIT Collector-Base Voltage

KTC4079

Contextual Info: SEMICONDUCTOR KTC4079 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E FEATURE B M M ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz) D J 3 1 G A 2 MAXIMUM RATING (Ta=25ᴱ) SYMBOL RATING UNIT

KTC*S

Abstract: 10.7MHZ KTC3879S FE3010
Contextual Info: SEMICONDUCTOR KTC3879S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE E B L L 3 H G A 2 D ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz) 1 MAXIMUM RATING (Ta=25ᴱ) UNIT Collector-Base Voltage

esm 30 450 v

Abstract: KTC4080E
Contextual Info: SEMICONDUCTOR KTC4080E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E FEATURES B ᴌSmall Reverse Transfer Capacitance : Cre=0.7pF Typ. D H G A 2 ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

Contextual Info: SEMICONDUCTOR KTC3193 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B FEATURE A ・High Power Gain : Gpe=30dB Typ. (f=10.7MHz). O F ・Recommended for FM IF, OSC Stage and AM CONV, IF Stage.

10.7Mhz

Abstract: KTC3193 455kH
Contextual Info: SEMICONDUCTOR KTC3193 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B FEATURE A ᴌHigh Power Gain : Gpe=30dB Typ. (f=10.7MHz). O F ᴌRecommended for FM IF, OSC Stage and AM CONV, IF Stage.

Contextual Info: SEMICONDUCTOR KTC3195 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B FEATURES A ・Small Reverse Transfer Capacitance O F : Cre=0.7pF Typ. . ・Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

Contextual Info: SEMICONDUCTOR KTC3192 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE A ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz). N E K J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC G D SYMBOL

KTC3192

Abstract: transistor KTC3192
Contextual Info: SEMICONDUCTOR KTC3192 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE A ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz). N E K MAXIMUM RATING (Ta=25ᴱ) J SYMBOL RATING UNIT Collector-Base Voltage

KTC4080

Contextual Info: SEMICONDUCTOR KTC4080 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E FEATURES B M M Small Reverse Transfer Capacitance D A J 2 : Cre=0.7pF Typ. 3 1 G Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

Contextual Info: SEMICONDUCTOR KTC3194 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES A ᴌSmall Reverse Transfer Capacitance : Cre=0.7pF Typ. . ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

OB105

Abstract: test circuit 100MHz KTC3880S
Contextual Info: SEMICONDUCTOR KTC3880S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Small Reverse Transfer Capacitance 2 A H 1 P RATING UNIT Collector-Base Voltage VCBO 40 V

KTC3195

Abstract: test circuit 100MHz transistor ktc3195
Contextual Info: SEMICONDUCTOR KTC3195 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B FEATURES A ᴌSmall Reverse Transfer Capacitance O F : Cre=0.7pF Typ. . ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

KTC3194

Contextual Info: SEMICONDUCTOR KTC3194 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES A ᴌSmall Reverse Transfer Capacitance : Cre=0.7pF Typ. . ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

TP5015

Abstract: NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by TP5015/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large–signal common emitter amplifier applications in industrial and commercial FM equipment operating in the 380 to

CSA970

Abstract: CSC2240
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package CSA970 CSC2240 CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Audio Amplifier B EC DIM A B C

HN1B26FS

Contextual Info: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1 6 2 5 3 4 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = −0.95 (typ.) • High hFE

2SA21

Abstract: 2SA2154CT 2SC6026CT
Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)

KTC9016S

Contextual Info: SEMICONDUCTOR KTC9016S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Small Reverse Transfer Capacitance 2 UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage

CSA970

Abstract: CSC2240 DSA0010683
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA970 CSC2240 CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Audio Amplifier B EC

KTC3191

Abstract: application of common emitter amplifier
Contextual Info: SEMICONDUCTOR KTC3191 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. B A FEATURE O F ᴌLow Noise Figure : NF=3.5dB Max. (f=1MHz). H G M MAXIMUM RATING (Ta=25ᴱ) SYMBOL RATING