apm4050
Abstract: APM4050P APM4050PU
Contextual Info: APM4050PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-25A, RDS ON =33mΩ (typ.) @ VGS=-10V RDS(ON)=47mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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apm4050pu-40v/-25ao-252apm4050p+4mil-std-883d-2003mil-std-883d-1005jesd-22-bapm4050
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APM4050AP
Abstract: apm4050 APM4050A APM4050APU
Contextual Info: APM4050APU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-25A, RDS ON =33mΩ (typ.) @ VGS=-10V G RDS(ON)=47mΩ (typ.) @ VGS=-4.5V • • • Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available
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apm4050apu-40v/-25ao-252apm4050ap+2apm4050aapm4050
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apm4050
Abstract: APM4050AP APM4050A APM4050APU STD-020C inverter source code ISD10* information storage device
Contextual Info: APM4050APU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-25A, RDS ON =33mΩ (typ.) @ VGS=-10V G RDS(ON)=47mΩ (typ.) @ VGS=-4.5V • • • S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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apm4050apu-40v/-25ao-252apm4050ap+8apm4050amil-std-883d-2003883d-1005jesd-22-bapm4050std-020cinverter source codeisd10* information storage device
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apm4050
Abstract: APM4050P TO-252 AA footprint
Contextual Info: APM4050PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-25A, RDS ON =33mΩ (typ.) @ VGS=-10V RDS(ON)=47mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS
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apm4050pu-40v/-25ao-252apm4050p+3prod-2000apm4050to-252 aa footprint
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