APM4010N
Abstract: APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C
Contextual Info: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.
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apm4010nu0v/57ao-252apm4010n+7apm4010apm*4010napm*4010013a1apm40a102std-020c
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APM4010N
Abstract: APM4010 apm*4010n APM4010NU apm*4010 APM40 A102 APM401
Contextual Info: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V G RDS(ON)=13mΩ (typ.) @ VGS=5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS
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apm4010nu0v/57ao-252apm4010n+6apm4010apm*4010napm*4010apm40a102apm401
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APW7181
Abstract: APM4010 apm*4015p APM4015 APM4010N apm*4010n APM4015P apm*4015
Contextual Info: APW7181 Full-Bridge Inverter Gate Driver Features General Description • Wide Input Voltage Range: 4.5V to 13.2V • Drives a Full-Bridge Inverter High-Side P- The APW7181 is designed to drive two high-side P-channel MOSFETs and two low-side N-channel MOSFETs in a
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apw7181jesd-22100maapm4010+6apm*4015papm4015apm4010napm*4010napm4015papm*4015
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