to252 footprint wave soldering
Abstract: A102 APM4012N APM4012NU STD-020C apm4012
Contextual Info: APM4012NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/55A, RDS ON =9mΩ (typ.) @ VGS=10V RDS(ON)=12mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.
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apm4012nu0v/55ao-252apm4012n+4to252 footprint wave solderinga102std-020capm4012
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apm4018n
Abstract: APM4018 APM4018NU APM-4018 APM40 APM-40
Contextual Info: APM4018NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, D RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available
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apm4018nu0v/60ao-252-3apm4018n+5jesd-22apm4018apm-4018apm40apm-40
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apm4018n
Abstract: APM4018 APM4018NU A102 APM-4018
Contextual Info: APM4018NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available
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apm4018nu0v/60ao-252apm4018n+3apm4018a102apm-4018
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APM4010N
Abstract: APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C
Contextual Info: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.
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apm4010nu0v/57ao-252apm4010n+7apm4010apm*4010napm*4010013a1apm40a102std-020c
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APM4015P
Abstract: apm*4015p apm4015 APM4015PU APM40 apm*4015 STD-020C inverter source code 013A1 DSA0042778
Contextual Info: APM4015PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-45A, RDS ON = 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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apm4015pu-40v/-45ao-252apm4015p+8apm*4015papm4015apm40apm*4015std-020cinverter source code013a1dsa0042778
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APM4015P
Abstract: apm4015 apm*4015p APM4015PU APM40 apm*4015 STD-020C to 220 229 APM-40
Contextual Info: APM4015PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-45A, RDS ON = 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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apm4015pu-40v/-45ao-252apm4015p+10mil-std-883d-2003mil-std-883d-1005jesd-22-bapm4015apm*4015papm40apm*4015std-020cto 220 229apm-40
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APM4015P
Abstract: apm4015 apm*4015p APM4015PU TO252-S 23146 apm*4015 FEB2008
Contextual Info: APM4015PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-45A, RDS ON = 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS
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apm4015pu-40v/-45ao-252apm4015p+6apm4015apm*4015pto252-s23146apm*4015feb2008
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APM4017PU
Abstract: APM4017P STD-020C
Contextual Info: APM4017PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-40A, RDS ON = 14mΩ (typ.) @ VGS= -10V RDS(ON)= 20mΩ (typ.) @ VGS= -4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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apm4017pu-40v/-40ao-252apm4017p+1std-020c
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APM4012NU
Abstract: 013A1 mosfet 30V 18A TO 252 A102 APM4012N
Contextual Info: APM4012NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/55A, RDS ON =9mΩ (typ.) @ VGS=10V RDS(ON)=12mΩ (typ.) @ VGS=5V • • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available
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apm4012nu0v/55ao-252apm4012n+3013a1mosfet 30v 18a to 252a102
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APM4010N
Abstract: APM4010 apm*4010n APM4010NU apm*4010 APM40 A102 APM401
Contextual Info: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V G RDS(ON)=13mΩ (typ.) @ VGS=5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS
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apm4010nu0v/57ao-252apm4010n+6apm4010apm*4010napm*4010apm40a102apm401
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APM4018
Abstract: apm4018n APM4018NU APM-4018 A102 A104 A108 B102 JESD-22 APM-40
Contextual Info: APM4018NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, D RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available
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apm4018nu0v/60ao-252-3apm4018n+8jesd-22apm4018apm-4018a102a104a108b102apm-40
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apm4015
Abstract: apm*4015 APM4015K APM40
Contextual Info: APM4015K P-Channel Enhancement Mode MOSFET Pin Description Features D • -40V/-7.5A, D D D RDS ON =18mΩ (typ.) @ VGS=-10V RDS(ON)=25mΩ (typ.) @ VGS=-4.5V • • • S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available
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apm4015k-40v/-7apm4015jesd-22+2apm*4015apm40
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APW7181
Abstract: APM4010 apm*4015p APM4015 APM4010N apm*4010n APM4015P apm*4015
Contextual Info: APW7181 Full-Bridge Inverter Gate Driver Features General Description • Wide Input Voltage Range: 4.5V to 13.2V • Drives a Full-Bridge Inverter High-Side P- The APW7181 is designed to drive two high-side P-channel MOSFETs and two low-side N-channel MOSFETs in a
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apw7181jesd-22100maapm4010+6apm*4015papm4015apm4010napm*4010napm4015papm*4015
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