APD RISE TIME, DARK, CAPACITANCE Search Results

IC 571

Abstract: 118-70-74-591 394-70-74-591 LM335 OM350
Contextual Info: Cooled - Large Area APDs Electro-Optical Characteristics All specifications apply when APD is operated at 0ºC and at a gain of 300. 3 mm Active Diameter Bias Voltage Range† mm 3 5 10 16 (V) 1700 to 2000 Temperature Capacitance Dark Current Rise Time Noise Current

apd array

Contextual Info: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.

Contextual Info: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.

Contextual Info: DATASHEET Photon Detection C30737LH-300 Series Low Capacitance Silicon Avalanche Photodiode in Leadless Ceramic Carrier SMT Package for High Volume Laser Meter and Range Finding Applications Key Features •      Low capacitance, <1pF, for high

S13081

Abstract: APD Arrays
Contextual Info: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits

SSO-AD-500-TO52i

Contextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

Avalanche photodiode APD

Contextual Info: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance

Contextual Info: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

TO52

Abstract: SSO-AD-230-TO52-S1
Contextual Info: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

avalanche photodiode noise factor

Contextual Info: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

TO52 package

Contextual Info: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

nir source

Contextual Info: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance

Avalanche photodiode APD

Contextual Info: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

InGaAs apd photodiode

Abstract: UDT Sensors Photodiode laser detector BPX-65
Contextual Info: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can

C30955EH

Contextual Info: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these

C30955EH

Contextual Info: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been

Contextual Info: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in

C30737LH-500-92

Abstract: CERAMIC LEADLESS CHIP CARRIER
Contextual Info: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,

C30902EH

Contextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Peltier

Abstract: apd 400- 700 nm peltier cooler peltier datasheet TO8 package
Contextual Info: SSO-ADH-1100-TO8P APD with Peltier - Cooler Special characteristics The SSO - AD - 1100 - TO8P is a thermoelectrically cooled APD with chip specially selected for low dark current and low "dark count rate". Applications include photon counting and other low light level sensing.