AP9922GEO Search Results
AP9922GEO Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP9922GEO-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 95.31KB | 4 |
AP9922GEO Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AP9922GEOContextual Info: AP9922GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 1.8V gate drive ▼ Optimal DC/DC battery application S2 S1 TSSOP-8 G1 S1 BVDSS 20V RDS ON 16mΩ ID D1 |
Original |
AP9922GEO 100ms 208/W AP9922GEO | |
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Contextual Info: AP9922GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance BVDSS G2 S2 D2 Capable of 1.8V Gate Drive S2 RDS ON G1 S1 Optimal DC/DC Battery Application TSSOP-8 20V 16m ID S1 D1 6.4A RoHS Compliant & Halogen-Free |
Original |
AP9922GEO-HF 100ms | |
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Contextual Info: AP9922GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 1.8V Gate Drive S2 G1 S1 ▼ Optimal DC/DC Battery Application TSSOP-8 BVDSS 20V RDS ON 16mΩ ID S1 D1 |
Original |
AP9922GEO-HF 100ms | |
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Contextual Info: Advanced Power Electronics Corp. AP9922GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 1.8V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 16mΩ ID RoHS-compliant, halogen-free S1 6.4A S2 |
Original |
AP9922GEO-HF-3 AP9922 9922GEO | |
AP9922GEOContextual Info: AP9922GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 1.8V Gate Drive S2 G1 S1 ▼ Optimal DC/DC Battery Application TSSOP-8 BVDSS 20V RDS ON 16mΩ ID S1 D1 |
Original |
AP9922GEO 100ms AP9922GEO |