AP18P10 Search Results
AP18P10 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP18P10AGH-HF | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 63.63KB | 4 | ||
| AP18P10AGJ-HF | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 63.63KB | 4 | ||
| AP18P10GH-HF | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 101.02KB | 4 | ||
| AP18P10GI | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 150.92KB | 5 | ||
| AP18P10GJ-HF | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 101.02KB | 4 | ||
| AP18P10GK-HF | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 94.19KB | 4 | ||
| AP18P10GM-HF | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 93.1KB | 4 | ||
| AP18P10GS | Advanced Power Electronics | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 133.68KB | 5 |
AP18P10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS -100V RDS ON Simple Drive Requirement 180m ID Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the |
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AP18P10GH/J -100V O-252 AP18P10GJ) O-251 O-251 18P10GJ | |
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Contextual Info: AP18P10GK-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement S ▼ Fast Switching Characteristic D ▼ RoHS Compliant & Halogen-Free SOT-223 BVDSS -100V RDS ON |
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AP18P10GK-HF OT-223 -100V AP18P10 100us 100ms | |
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Contextual Info: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS Simple Drive Requirement RDS ON -100V 160m ID Fast Switching Characteristic G D S -12A TO-220CFM(I) Description D Advanced Power MOSFETs from APEC provide the designer |
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AP18P10GI -100V O-220CFM O-220CFM 18P10GI | |
18P10GH
Abstract: 18P10GJ AP18P10GH 18P10G
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AP18P10GH/J -100V O-252 AP18P10GJ) O-251 O-251 18P10GJ 18P10GH 18P10GJ AP18P10GH 18P10G | |
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Contextual Info: AP18P10GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D D ▼ Simple Drive Requirement D D BVDSS -100V RDS ON 180mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free |
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AP18P10GM-HF -100V 100us 100ms | |
18P10GS
Abstract: AP18P10GS 18P10G
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AP18P10GS -100V O-263 O-263 18P10GS 18P10GS AP18P10GS 18P10G | |
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Contextual Info: AP18P10GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement -100V RDS ON 180mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS |
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AP18P10GH/J-HF -100V O-252 AP18P10GJ) 100us 100ms | |
18P10GI
Abstract: ap18p10gi 18P10G
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AP18P10GI -100V O-220CFM O-220CFM 18P10GI 18P10GI ap18p10gi 18P10G | |
AP18P10GIContextual Info: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS ON 160mΩ ▼ Fast Switching Characteristic ID G D S -12A TO-220CFM(I) Description |
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AP18P10GI -100V O-220CFM 100ms AP18P10GI | |
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Contextual Info: AP18P10AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -100V RDS ON 140mΩ ID G ▼ RoHS Compliant & Halogen-Free |
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AP18P10AGH/J-HF -100V O-252 AP18P10AGJ) O-251 100ms | |
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Contextual Info: AP18P10AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -100V RDS ON Simple Drive Requirement ID Fast Switching Characteristic G RoHS Compliant & Halogen-Free 140m -12A S Description |
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AP18P10AGH/J-HF -100V O-252 AP18P10AGJ) | |
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Contextual Info: Advanced Power Electronics Corp. AP18P10GS-HF-3 P-channel Enhancement-mode Power MOSFET D Simple Drive Requirement BV DSS Low Gate Charge RDS ON Fast Switching Performance G RoHS-compliant, halogen-free -100V 160mΩ ID -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best |
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AP18P10GS-HF-3 -100V AP18P10GS-HF-3 O-263 O-263 AP18P10 18P10GS | |
AP18P10GS
Abstract: 18P10G
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AP18P10GS -100V O-263 O-263 18P10GS AP18P10GS 18P10G | |
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Contextual Info: AP18P10GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D D Simple Drive Requirement -100V RDS ON D D 180m ID Fast Switching Characteristic RoHS Compliant & Halogen-Free SO-8 S S S |
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AP18P10GM-HF -100V 100us 100ms | |
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Contextual Info: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS ON 160mΩ ID ▼ Fast Switching Characteristic G D S -12A TO-220CFM(I) Description |
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AP18P10GI -100V O-220CFM 100ms | |