Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    18P10G Search Results

    SF Impression Pixel

    18P10G Price and Stock

    YAGEO Corporation

    YAGEO Corporation XP18P10GM

    MOS P -100V -2.7A 180MOHM SO-8 - Tape and Reel (Alt: XP18P10GM)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XP18P10GM Reel 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Avnet Abacus XP18P10GM 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    YAGEO Corporation XP18P10GK

    MOS P -100V -3.1A 160MOHM SOT-223 - Tape and Reel (Alt: XP18P10GK)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XP18P10GK Reel 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Avnet Abacus XP18P10GK 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    18P10G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS -100V RDS ON Simple Drive Requirement 180m ID Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the


    Original
    AP18P10GH/J -100V O-252 AP18P10GJ) O-251 O-251 18P10GJ PDF

    Contextual Info: 18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS Simple Drive Requirement RDS ON -100V 160m ID Fast Switching Characteristic G D S -12A TO-220CFM(I) Description D Advanced Power MOSFETs from APEC provide the designer


    Original
    AP18P10GI -100V O-220CFM O-220CFM 18P10GI PDF

    18P10GH

    Abstract: 18P10GJ AP18P10GH 18P10G
    Contextual Info: 18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS -100V RDS ON 180mΩ ID ▼ Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the


    Original
    AP18P10GH/J -100V O-252 AP18P10GJ) O-251 O-251 18P10GJ 18P10GH 18P10GJ AP18P10GH 18P10G PDF

    18P10GS

    Abstract: AP18P10GS 18P10G
    Contextual Info: 18P10GS RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -100V RDS ON 160mΩ ID G -12A S Description Advanced Power MOSFETs from APEC provide the designer with the


    Original
    AP18P10GS -100V O-263 O-263 18P10GS 18P10GS AP18P10GS 18P10G PDF

    18P10GI

    Abstract: ap18p10gi 18P10G
    Contextual Info: 18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS ON 160mΩ ▼ Fast Switching Characteristic ID G D S -12A TO-220CFM(I) Description


    Original
    AP18P10GI -100V O-220CFM O-220CFM 18P10GI 18P10GI ap18p10gi 18P10G PDF

    Contextual Info: Advanced Power Electronics Corp. 18P10GS-HF-3 P-channel Enhancement-mode Power MOSFET D Simple Drive Requirement BV DSS Low Gate Charge RDS ON Fast Switching Performance G RoHS-compliant, halogen-free -100V 160mΩ ID -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original
    AP18P10GS-HF-3 -100V AP18P10GS-HF-3 O-263 O-263 AP18P10 18P10GS PDF

    AP18P10GS

    Abstract: 18P10G
    Contextual Info: 18P10GS RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -100V RDS ON 160mΩ ID G -12A S Description The Advanced Power MOSFETs from APEC provide the designer with


    Original
    AP18P10GS -100V O-263 O-263 18P10GS AP18P10GS 18P10G PDF

    Contextual Info: 18P10GS RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS -100V RDS ON Simple Drive Requirement ID Fast Switching Characteristic G 160m -12A S Description Advanced Power MOSFETs from APEC provide the designer with the


    Original
    AP18P10GS -100V O-263 O-263 18P10GS PDF