AOW 28 Search Results

IC CD4046B

Abstract: CD4018 4046a IC vco 900 1800 mhz
Contextual Info: CD4046B Types Aowò CMOS Micropower Phase-Locked Loop T h e R C A -C D 4 0 4 6 B C M O S M ic ro p o w e r Phase-Locked L oop PLL consists o f a iowpower, linear voltage-controlled oscillator (VCO} and tw o d iffe re n t phase comparators having a common signal-input am plifier and

Contextual Info: P U M G U M 92100 4 x 4 Analog Crosspoint AOW M CtD W W OÜCTBßSOHPtüN Features • Low on resistance — ty p ic a lly ■ Matched sw itch characteristics 5 0 il@ 1 0 V d c ■ 10 MHz sw itch band w id th ■ "B U I L T -IN " c o n tro l latches ■ Vnn

Contextual Info: KMM5368003BK/BKG KMM5368103BK/BKG DRAM MODULE KMM5368003BK/BKG & KMM5368103BK/BKG Fast Page Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M QCAS DRAM with 300mil PKG GENERAL DESCRIPTION The Samsung KMM53680 1 03BK is a 8M bit x 36 Dynamic RAM high density memory module. The

KM44C4104bk

Contextual Info: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The

8216

Abstract: h 8216 L146 jhdd ejdd
Contextual Info: 97-07 . RQNK ]z,3aeelv^ <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHUVSKT Y Y Y Y Y Y Y Y Y Y v>A: ~Dbn uegghle v>A: ~Dbn hddedhld v>A: ~Dbns,sdhddedeehfi 4>=B24B 52B2 4>:; sDCI68I 6GG6C<:B:CI fq` fr` fs gjdB2 eddB ]6I eq j1ts^ sDCI68I G:H>HI6C8: sDCI68I G6I>C< ]-:Hb AD69^

ADSP-BF533

Abstract: ADSP-BF561 EE-271 cache-blocks
Contextual Info: Engineer-to-Engineer Note EE-271 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail processor.support@analog.com or processor.tools.support@analog.com for technical support.

Contextual Info: MARKTECH INTERNATIONAL 4bE » • S ? cl cl b S S QQ007Q2 1 ■MKT Dot Matrix Display 4.0” DIGIT SIZE - 5x7 MAXIMUM RATINGS PEA K W AVE­ LENGTH N PA RT NO. EMITTED COLOR •f mA) Vr (V) PD (mW) O PTO -ELECTRICAL CH ARAC TERISTIC S Topr (°C) Tstg (°C)

BY 218-200

Abstract: BY 218-400
Contextual Info: S-ÎC D 1 S G S-THQMSON 7 ^ 2 3 ? GDüeDTS B Y 2 1 8 -1 0 0 - DIVISION SEMICONDUCTEURS DISCRETS _ ‘ =. .t BY 2 1 8 -6 0 0 9. ,.t . i. . 5 _ _ o THOMSON'CSF T | FAST RECOVERY RECTIFIER DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E FAST RECOVERY DIODES

PD7004C

Abstract: uPD7720 upd7004c PD7004 upD7720D
Contextual Info: /¿ P P 7 0 0 4 C _« à t t 10 /iP D 7 0 0 4 C Iä 8 - f - r > ^ / t i O T t o -T u 3 > - i v ? — 7 * -f X B f t t f l Ä L / : ? > + '/710 B itii;W t« « A / D « Ä 5 -C -r . - K t B u / u - t— k ä '^ > o x r + ^ - r o - k •*

Contextual Info: trrnmmi d is c o n tin u e d Product Description S C A -1 4 A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities

atmel 64

Abstract: 1016E AT88SC153 AT88SC153-09ET-00 AT88SC153-09PT-00 AT88SC153-10SU-00 AT89C2051 AT89C51 AT90S1200 ATmel AT89C2051 lock bit
Contextual Info: Features • • • • • • • • • One 64 x 8 512-bit Configuration Zone Three 64 x 8 (512-bit) User Zones Programmable Chip Select Low-voltage Operation: 2.7V to 5.5V Two-wire Serial Interface 8-byte Page Write Mode Self-timed Write Cycle (10 ms max)

Contextual Info: BICMOS 262144-BIT ECL RANDOM ACCESS MEMORY TS324-A888 August 1988 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY tOVAN. 'CE Pin Assignments for DIP The Fujitsu MBM100C504 is fully decoded 262144 bit BICMOSIß'O. ECL random access memory designed for main memory, control

1016B

Abstract: AT88SC153 AT89C2051 AT89C51 AT90S1200
Contextual Info: Features • • • • • • • • • • One 64 x 8 512 bit Configuration Zone Three 64 x 8 (512 bit) User Zones Programmable Chip Select Low-voltage Operation: 2.7V to 5.5V Two-wire Serial Interface 8-byte Page Write Mode Self-timed Write Cycle (10 ms max)

Contextual Info: Features One 64 x 8 512 bit Configuration Zone Three 64 x 8 (512 bit) User Zones Programmable Chip Select Low-voltage Operation: 2.7V to 5.5V Two-wire Serial Interface 8-byte Page Write Mode Self-timed Write Cycle (10 ms max) ISO 7816-3 Synchronous Protocol

AT89C2051 microcontroller

Abstract: program protection mode of AT89c51 1016b AT88SC ATmel AT89C2051 ATmel AT89C2051 lock bit ATmel AT89C51 Atmel AT89C51 lock microcontroller AT89C2051 AT88SC153
Contextual Info: Features • • • • • • • • • • One 64 x 8 512 bit Configuration Zone Three 64 x 8 (512 bit) User Zones Programmable Chip Select Low-voltage Operation: 2.7V to 5.5V Two-wire Serial Interface 8-byte Page W rite Mode Self-tim ed W rite Cycle (10 ms max)

1016c

Abstract: AT88SC153-09PT-00
Contextual Info: Features • • • • • • • • • One 64 x 8 512-bit Configuration Zone Three 64 x 8 (512-bit) User Zones Programmable Chip Select Low-voltage Operation: 2.7V to 5.5V Two-wire Serial Interface 8-byte Page Write Mode Self-timed Write Cycle (10 ms max)

AT88SC153

Abstract: AT88SC153-09ET-00 AT88SC153-09GT-00 AT88SC153-09HT-00 AT88SC153-09PT-00 AT88SC153-10PI-00 AT89C2051 AT89C51 AT90S1200 AT89C51 INSTRUCTION SET
Contextual Info: Features • • • • • • • • • One 64 x 8 512-bit Configuration Zone Three 64 x 8 (512-bit) User Zones Programmable Chip Select Low-voltage Operation: 2.7V to 5.5V Two-wire Serial Interface 8-byte Page Write Mode Self-timed Write Cycle (10 ms max)

1013AA

Contextual Info: BEI . RF2604 MICRO DEVICES LINEAR IF AMPLIFIER WITH AGC AND RSSI Typical Applications • Broadband PCS Receivers • CATV Set-top and Head-end Systems • High Data Rate Digital Systems • Portable Battery Powered Equipment • Dual Mode Digital/Analog Receivers

Contextual Info: HM67M3632 Series 32k x 36 b it S yn ch ro n o u s F ast S ta tic RAM w ith B u rs t C ounter and S e lf-T im ed W rite P ro d u c t P review HITACHI Descriptions Features The H itach i HM 67M 3632 is a 1.179.648 bits density high perform ance synchronous static

irf 405

Abstract: METAL-CLAD Wire wound resistors IRV60 irv80 Isotek IRF 1200 v IRF 250W IRF series IRV120 400w audio power amplifiers
Contextual Info: i s o t e k Tel: 508-673-2900 Fax: 508-676-0885 General Specifications Model Wattage Rating IRV 600/1200 Terminais Resistance Range Chasis Mounted Inductive Non-Inductive 60 0.1-270 0 .1-56 80 0.1-910 0.1-110 0 .1 -1 .1K 0.1-240 IRH 60 Each model in this series

115 vac 3 phase bridge rectifier

Abstract: DRA480
Contextual Info: DRA480 SERIES AC - D C D IN RAIL M O U N T A BLE P O W E R S U P P L Y IN D U STRIA L C O N T R O L E Q U IP M E N T FEATURES • ACTIVE PFC FUNCTION • PARALLEL FUNCTION SWITCH SELECTABLE • UNIVERSAL INPUTVOLTAGE • SELV COM PONENTS DESI • 3 YEARS WARRANTYG

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

KMM5368103B

Abstract: 53680 KMM5368103BKG 4Mx4 DRAM
Contextual Info: KMM5368003BK/BKG KMM5368103BK/BKG DRAM MODULE KMM5368003BK/BKG $ KMM5368103BK/BKG Fast Page Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M QCAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53680 1 03BK is a 8M bit x 36 D ynam ic RAM high

Contextual Info: “H Y U N D A I H Y 6 7 1 6 1 0 0 /1 0 1 64K x 16 Bit SYNCHRONOUS CMOS SRAM P RELIM IN ARY DESCRIPTION This device integrates high-speed 64Kx16 SR A M core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge