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AON6410L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410 and	Original	AON6410 AON6410/L AON6410 AON6410L -AON6410L	PDF
AON6410 Abstract: soic8 footprint Contextual Info: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410	Original	AON6410 AON6410/L AON6410L -AON6410L AON6410 soic8 footprint	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410 and

Original

AON6410 AON6410/L AON6410 AON6410L -AON6410L

PDF

AON6410

Abstract: soic8 footprint
Contextual Info: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410

Original

AON6410 AON6410/L AON6410L -AON6410L AON6410 soic8 footprint

PDF