AON2701L Search Results
AON2701L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or |
Original |
aon2701aon2701/laon2701l-aon2701l | |
AON2701
Abstract: AON2701L 2x2 dfn DFN 2x2 PACKAGE
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Original |
aon2701aon2701/laon2701l2x2 dfn+1 | |
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Contextual Info: AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or |
Original |
aon2701aon2701/laon2701l-aon2701l | |
2x2 dfn
Abstract: M12200 AON2701 AON2701L
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Original |
aon2701aon2701/laon2701l2x2 dfn+1 | |
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Contextual Info: AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or |
Original |
aon2701aon2701/laon2701l |