AOD3 Search Results

AOD3N60

Abstract: AOU3N60
Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

aou3n60

Abstract: AOD3N60
Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

aod3n50

Contextual Info: AOD3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss

Contextual Info: AOD3C60 600V,3A N-Channel MOSFET General Description Product Summary The AOD3C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along

74hc335

Contextual Info: IC/Standard ICs BU74HC365/BU74HC365F ROHM CO LTD MDE » B U 74H C 335 BU74HC3G5F m .7626^ aOD3baS s o r h n - ^ y ? x 3 X t - h *y 7 7 y Hex 3-State Noninverting Buffer with Common Enables , 10 h l - c— \ • ¿'f-JFÌ \f"ji[2I/Dimensions (Unit : mm)

AOD3N50

Abstract: AOU3N50
Contextual Info: AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOU3N60

Abstract: AOD3N60 RGS-12
Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOD3N50

Abstract: Omega 2a 500v
Contextual Info: AOD3N50 3A, 500V N-Channel MOSFET General Description Features The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: AOD3C60 600V,3A N-Channel MOSFET General Description Product Summary The AOD3C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along

Contextual Info: AOD3C50 500V,3A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 12A RDS(ON),max < 1.4Ω

Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

AOD3N60

Abstract: AOU3N60
Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOD3N50

Abstract: AOU3N50
Contextual Info: AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

mbd501

Abstract: MC7400 d8316 8192-BIT
Contextual Info: M CM 6580 M CM 6581 M CM 6583 8192-BIT R E A D O N L Y M EM O R IES MOS CO LU M N S E L E C T C H A R A C T E R G E N E R A T O R S N C H A N N E L, LOW T H R E S H O LD The M CM 6580 is a m ask-program m able 8192-b it vertical scan (colum n select) character generator. It contains 128 characters in a

darlington pair transistor 1A

Abstract: ECG904 alu schematic circuit with transistor Darlington pair MHO16 BT 156 transistor
Contextual Info: PHILIPS E C G INC bbSSÌHfl 000350^ t 17E D ECG904 GENERAL-PURPOSE TRANSISTOR ARRAY semiconductors DIMENSIONAL OUTLINE D im e n sio n s In In c h e s and m illim eters Fof-Low -Pow sr Applications at Frequencies from D C Through the V H F Range FEATURES •

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

01JS

Contextual Info: Semiconductor O KI MSM7564-01 A Single Chip 14.4 kbps Data & Fax Modem G EN ER A L DESCRIPTION The MSM 7564-01 is a highly integrated single-chip modem IC which provides the functions needed to construct 14.4 kbps full-duplex and half-duplex modems. This device is compliant with the