AO6601L Search Results

AO6601

Abstract: AO6601L
Contextual Info: AO6601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60mΩ (VGS = 10V) < 135mΩ (VGS = -10V) < 75mΩ (VGS = 4.5V) < 185mΩ (VGS = -4.5V)

AO6601

Abstract: AO6601L
Contextual Info: AO6601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60mΩ (VGS = 10V) < 135mΩ (VGS = -10V) < 75mΩ (VGS = 4.5V) < 185mΩ (VGS = -4.5V)

Contextual Info: Complementary MOSFET ELM16601EA-S •General Description ■Features ELM16601EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • • Vds=30V Vds=-30V Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 135mΩ(Vgs=-10V)

Contextual Info: コンプリメンタリーパワー MOSFET ELM16601EA-S •概要 ■特長 ELM16601EA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。

复合

Abstract: ELM16601EA
Contextual Info: 复合沟道 MOSFET ELM16601EA-S •概要 ■特点 ELM16601EA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=3.4A Vgs=10V

Contextual Info: Complementary MOSFET ELM16601EA-S •General Description ■Features ELM16601EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • • P-channel Vds=30V Vds=-30V Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V)