AO6407L Search Results
AO6407L Datasheets Context Search
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Contextual Info: AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM |
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AO6407 AO6407L |