AO64 Search Results

AO6409

Abstract: 2A940
Contextual Info: AO6409 20V P-Channel MOSFET General Description Product Summary The AO6409 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

AO6401A

Contextual Info: AO6401A 30V P-Channel MOSFET General Description Product Summary The AO6401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

TSOP 54 land pattern

Abstract: AO6405 TSOP-6 Marking land pattern for TSOP 2 86
Contextual Info: Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications.

AO6408

Contextual Info: March 2003 AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6408 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for

AO6420

Contextual Info: AO6420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6420 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6420 is Pb-free

AO6409

Abstract: AO6409L
Contextual Info: AO6409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6409 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a

AO6405

Abstract: AO6405L 676v
Contextual Info: AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6405 is Pb-free

AO6422

Contextual Info: AO6422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6422/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application.

AO6409AL

Contextual Info: AO6409AL P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AO6409AL uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable

AO6402AL

Abstract: AO6402A V2732
Contextual Info: AO6402A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6402A/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow

TSOP-6 marking 6A

Abstract: AO6401 AO6400 land pattern for TSOP land pattern for TSOP input id TSOP-6 Marking
Contextual Info: July 2001 AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in

AO6407

Abstract: DSA00304013 land pattern for TSOP 2 50 marking code 46 tsop marking code 46 tsop-6
Contextual Info: January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

Contextual Info: AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

Contextual Info: AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

Contextual Info: AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

AO6405

Abstract: AO6405L
Contextual Info: Rev 2: Nov 2004 AO6405, AO6405L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM

Contextual Info: AO6424 30V N-Channel MOSFET General Description Product Summary The AO6424 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device may be used as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 5A RDS(ON) (at VGS=10V)

AO6404

Abstract: AO6404L
Contextual Info: AO6404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

AO6414

Abstract: diode rl104 AO6414L
Contextual Info: AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6414 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load

AO6401A

Abstract: PF612
Contextual Info: AO6401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

ao6424

Contextual Info: AO6424 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AO6424 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

AO6409

Contextual Info: AO6409 20V P-Channel MOSFET General Description Product Summary The AO6409 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

Contextual Info: AO6420 60V N-Channel MOSFET General Description Product Summary The AO6420 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.2A (VGS = 10V)