AO4476L Search Results

samsung r580

Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL

RTL8192

Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308
Contextual Info: Point LABEL-LOGO BEZEL-ODD KNOB-ODD LENS-ODD HDD Componet BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A Object description LABEL-LOGO_SAMSUNG;NP,SEC,ARTPAPER+OPP COATING,-,-,-,-,W

Contextual Info: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

MEC1308-NU

Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4

AO4476

Abstract: AO4476L RJA34 15a diode
Contextual Info: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

BA41-01190A

Abstract: mec1308 K4W1G1646E-HC12 SMSC mec1308 tps51621 marvell 88E8059 AU6336C52 20b1 diode samsung crt GC1036
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D D sheet1. Cover - 1 sheet2. Block Diagram -(2)

c945 g 528

Abstract: RX781M smd diode ae c604 SLG8SP628VTR 88E8057 RX781 SB700 slg8sp628v 22p smd H8S-2110B
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents QingDao-D D Model Name PBA Name

SCB-1700N

Abstract: SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level Code 1 BA44-00264A 1 Assembled ADAPTOR 1 BA43-00212A 1 BATTERY 1 BA43-00220A

rtl8103

Abstract: mec1308 tps51620 N10M-GE BA41-01100A h3 379 RTL8103EL ALC269 AON6912L adc633
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D QingDao_ULCPC g n l u a s i t m n a e S fid n o