AO3424 Search Results

AO3424

Abstract: N-Channel
Contextual Info: AO3424 30V N-Channel MOSFET General Description Product Summary The AO3424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

AO3424

Contextual Info: AO3424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3424/L uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

AO3424

Contextual Info: AO3424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3424 uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

Contextual Info: AOS Semiconductor Product Reliability Report AO3424/AO3424L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Apr 19, 2006 1 This AOS product reliability report summarizes the qualification result for AO3424. Accelerated

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

DS51948

Abstract: DS00000A
Contextual Info: Graphics Display Truly 5.7" 640 x 480 Board Information Sheet Features • 5.7” VGA 640 x 480 TFT display with 24-bit parallel RGB interface and 4-wire resistive touch interface • Resistive touch controller (AR1020) interfaced to the MCU through the SPI module

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

ELM13424CA

Contextual Info: 单 N 沟道 MOSFET ELM13424CA-S •概要 ■特点 ELM13424CA-S 是 N 沟道低输入电容，低工作电 •Vds=30V 压，低导通电阻的大电流 MOSFET。 ·Id=3.8A Vgs=10V ·Rds(on) < 55mΩ (Vgs=10V) ·Rds(on) < 65mΩ (Vgs=4.5V) ·Rds(on) < 85mΩ (Vgs=2.5V)

Contextual Info: Single N-channel MOSFET ELM13424CA-S •General description ■Features ELM13424CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and operation with gate voltages as low as 2.5V. • • • • • Vds=30V Id=3.8A (Vgs=10V)

MRF24WBOMA

Abstract: TFT2N0369-E TFT-G240320LTSW-118W-E SSD1926 LCD0025 TRULY tft BMA150 10.1 inch lcd with led backlight 40 pin connector pinout SST25VF016 HDR2X14
Contextual Info: Multimedia Expansion Board User’s Guide 2010 Microchip Technology Inc. DS61160A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: シングル N チャンネル MOSFET ELM13424CA-S •概要 ■特長 ELM13424CA-S は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=3.8A Vgs=10V ・ Rds(on) < 55mΩ (Vgs=10V)

Contextual Info: Single N-channel MOSFET ELM13424CA-S •General description ■Features ELM13424CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and operation with gate voltages as low as 2.5V. • • • • • Vds=30V Id=3.8A (Vgs=10V)

AO4946

Abstract: AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820
Contextual Info: NEW! MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Alpha and Omega Semiconductor AOS has a portfolio of approximately 400 products making AOS a well known, high volume, global supplier of Power MOSFETs. This diverse product range includes both N and P