AO3422L Search Results
AO3422L Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AO3422L | Alpha & Omega Semiconductor | N-Channel Enhancement Mode Field Effect Transistor | Original | 132.8KB | 4 |
AO3422L Price and Stock
Alpha & Omega Semiconductor AO3422LMOSFET N-CH 55V 2.1A SOT23-3 |
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AO3422L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AOS Semiconductor Product Reliability Report AO3422/AO3422L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Oct 26, 2006 1 This AOS product reliability report summarizes the qualification result for AO3422. Accelerated |
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AO3422/AO3422L, AO3422. AO3422 Mil-Std-105D | |
AO3422
Abstract: AO3422L M310210
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AO3422 AO3422/L AO3422 AO3422L -AO3422L O-236 OT-23) M310210 | |
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Contextual Info: AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load |
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AO3422 AO3422 AO3422L O-236 OT-23) | |
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Contextual Info: AO3422 N-Channel Enhancement Mode Field Effect Transistor TO-236 SOT-23 Features VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V) General Description D The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It |
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AO3422 O-236 OT-23) AO3422 AO3422L | |
AO3422
Abstract: AO3422L
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AO3422 AO3422 AO3422L O-236 OT-23) |