AO3415L Search Results

AO3415L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AO3415L_107		Alpha & Omega Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V SOT23	Original	PDF	285.23KB

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Alpha & Omega Semiconductor


Alpha & Omega Semiconductor AO3415L Transistors
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AO3415L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	AO3415 AO3415 AO3415L AO3415L O-236 OT-23) OT-23	PDF
AO3415L Abstract: AO3415 Contextual Info: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	AO3415 AO3415/L AO3415 AO3415L -AO3415L O-236 OT-23)	PDF
Contextual Info: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	AO3415 AO3415 AO3415L AO3415L O-236 OT-23)	PDF
MEC1308-NU Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308 Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4	Original	VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308	PDF
AO3415L Abstract: ao3415 Contextual Info: Rev 3: May 2004 AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	AO3415 AO3415 AO3415L AO3415L O-236 OT-23)	PDF