ANTIPARALLEL SCR Search Results

SKiiP 33 NEC 125 To

Abstract: skiip 33 ups 063 skiip 32 ups 063 semikron skiip 33 nec skiip 85 UPS 06 skiip 33 nec 125 t semikron skiip 33 NEC 125 semikron skiip 32 ups 063 skiip 32 ups 06 SKIIP 33 UPS 06
Contextual Info: MiniSKiiP Technology
Pressure contact of all power and auxiliary connections instead of soldered joints.
Integration of latest chip technology: • • • • • • Low switching loss 1200 V, homogeneous NPT IGBTs with antiparallel CAL-diodes Low forward loss 600 V PT-IGBTs with antiparallel

Contextual Info: GaAs Schottky Diode Antiparallel Pair Technical Data HSCH-9551 Features • Low Junction Capacitance— typically 40 fF • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection

HSCH-9551

Abstract: GaAs Schottky
Contextual Info: GaAs Schottky Diode Antiparallel Pair Technical Data HSCH-9551 Features • Low Junction Capacitance— typically 40 f F • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: HSCH-9551 GaAs Schottky HSCH-9551 Equivalent KY Series HSCH-9251 Die Attach and Bonding Guidelines 9551
Contextual Info: Agilent HSCH-9551 GaAs Schottky Diode Antiparallel Pair Data Sheet Features • Low Junction Capacitance – typically 40 fF • Low Series Resistance – typically 3 Ω • Large bond pads suitable for automated wire-bonding or flip-chip assembly • Polyimide scratch protection

Contextual Info: SANGDEST MICROELECTRONICS Technical Data Data Sheet N0416 Rev. - SURF1060 Green Products SURF1060 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

H9510

Abstract: GB100DA60UP
Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

Contextual Info: VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery

GT100DA60U

Contextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

GT100DA60U

Contextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

E78996 diode

Abstract: GB100DA60UP
Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GT100DA60U

Contextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

IRF 902

Abstract: GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V
Contextual Info: PD - 50071C GA600GD25S SINGLE SWITCH IGBT DUAL INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

GA600HD25S

Abstract: igbt "internal thermistor" int-a-pak
Contextual Info: PD - 94341A GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

Contextual Info: VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Warp Speed IGBT , 50 A FEATURES • Gen 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses

VS-GA100TS60SFPBF

Contextual Info: VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors “Half-Bridge” IGBT INT-A-PAK, Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

GT100DA60U

Contextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse