ANODE GATE THYRISTOR Search Results

Unijunction

Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
Contextual Info: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Thyristors TO-92 MAC97A6,A8 TRIAC 1. ANODE MAIN FEATURES 2. GATE Symbol value unit IT RMS 1 A MAC97A6 400 V MAC97A8 600 VDRM/VRRM ITSM 8 3. ANODE V A DESCRIPTION Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits

NTE308

Abstract: NTE310
Contextual Info: SILICON GATE CONTROLLED SWITCH GATE TURN-OFF THYRISTOR Maximum Ratings NTE Type No. 276 Description and Application SCR, Gate Turn Off TV Application Repetitive Peak Forward Off-State Voltage (Volts) On-State Anode Current (Amps) Surge On-State Current (Amps)

Contextual Info: Thyristor SMD Type 0.47A All Diffused Type SCR Power Mini Mold 03P4J Features High Anode to Cathode Voltage:VDRM:VRRM=200V 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Non-Repetitive Peak Reverse Voltage VRSM 500 V

Contextual Info: Thyristor SMD Type 0.47A All Diffused Type SCR Power Mini Mold 03P2J Features High Anode to Cathode Voltage:VDRM:VRRM=200V 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRSM 300 V Non- Repetitive Peak -off Voltage VDSM

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors BT136 TRIAC TO-220-3L MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Thyristors BT136S TRIAC TO-252-2L MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Thyristors BT136S TRIAC TO-252-2L MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

bt136 triac

Abstract: TRIAC bt136 Thyristor BT136 BT136 BT136 motor equivalent for TRIAC BT136 bt136triac Thyristor to220 triac to-220
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristors TO-220 BTB06 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 6 A 3. GATE VDRM/VRRM 600 V IGT(Q1) 5 to 50 mA DESCRIPTION Suitable for AC switching operations, the BTB06 series can be used as

CR5AS-12

Abstract: IGT200
Contextual Info: CR5AS-12 Thyristor Medium Power Use REJ03G0345-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 5 A • VDRM : 600 V • IGT : 200 µA • Non-Insulated Type • Glass Passivation Type Outline MP-3A 4 2, 4 3 12 3 1 1. 2. 3. 4. Cathode Anode Gate Anode Applications

"mos controlled thyristor"

Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Contextual Info: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability

CR08AS-12-T13

Contextual Info: CR08AS-12 Thyristor Low Power Use REJ03G0349-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.8 A • VDRM : 600 V • IGT : 100 µA • Non-Insulated Type • Glass Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications

Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications

Contextual Info: OIXYS CS 20 Phase Control Thyristor v RRM = 1200-1600 V ^T RMS ” 30 A *T(AV)M = TO-247 AD Type CS 20-12io1 CS 20-14io1 CS 20-16io1 1200 1400 1600 1200 1400 1600 1 9 A C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions ^T(RMS) T"vj ^T(AV)M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors TO-220-3L BTB12 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 12 A 3. GATE VDRM/VRRM 600 V IGT(Q1) 5 to 50 mA DESCRIPTION The BTA/BTB12 and T12 triac series is suitable for general purpose AC

Contextual Info: FCR100-6 Description Mechanical Dimensions TO-92 1 2 1. CATHODE 2. GATE 3. ANODE 3 Feature: ．Sensitive gate trigger current. ．Driven directly with IC and MOS device. ．Feature proprietary, void-free glass passivate ．Designed for high volume, line-powered

Contextual Info: FCR150-8 Description Mechanical Dimensions TO-92 1 2 1. CATHODE 2. GATE 3. ANODE 3 Feature: ．Sensitive gate trigger current. ．Driven directly with IC and MOS device. ．Feature proprietary, void-free glass passivate ．Designed for high volume, line-powered

MCR100-6

Abstract: MCR100-8 mcr100-6 p mcr100 MCR1006 "Silicon Controlled Rectifiers" MCR100-6 Datasheet transistor mcr100-6 MCR100 8 mcr-100
Contextual Info: MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead Pb -Free SCRs 0.8 A RMS 400/600 Voltage A 1.Cathode 2.Gate 3.Anode G C 1 2 3 TO-92 Maximum Ratings (TA=25°C unless otherwise noted) Symbol MCR100-6 MCR100-8

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors BTB04 TO-220-3L TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 4 A VDRM/VRRM BTB04-400 BTB04-600 400 600 5 to 25 IGT 3. GATE V mA DESCRIPTION The BTB04 triac family are high performance glass passivated PNPN devices.These parts are suitables

CS thyristor

Contextual Info: □IXYS Phase Control Thyristor CS 20 iT RMS TRMS = 30 A ^TAVM = 1 9 A VRRM = 1 2 0 0 -1600 V TO-247 AD Type 1200 1400 1600 CS 20-12ÌO1 CS 20-14io1 CS 20-16io1 1200 1400 1600 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test C onditions ^TRMS T VJ ~ T "Vj M