ANODE GATE THYRISTOR Search Results

Unijunction

Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
Contextual Info: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Thyristors TO-92 MAC97A6,A8 TRIAC 1. ANODE MAIN FEATURES 2. GATE Symbol value unit IT RMS 1 A MAC97A6 400 V MAC97A8 600 VDRM/VRRM ITSM 8 3. ANODE V A DESCRIPTION Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits

Contextual Info: Thyristor SMD Type 0.47A All Diffused Type SCR Power Mini Mold 03P4J Features High Anode to Cathode Voltage:VDRM:VRRM=200V 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Non-Repetitive Peak Reverse Voltage VRSM 500 V

Contextual Info: Thyristor SMD Type 0.47A All Diffused Type SCR Power Mini Mold 03P2J Features High Anode to Cathode Voltage:VDRM:VRRM=200V 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRSM 300 V Non- Repetitive Peak -off Voltage VDSM

bt136 triac

Abstract: TRIAC bt136 Thyristor BT136 BT136 BT136 motor equivalent for TRIAC BT136 bt136triac Thyristor to220 triac to-220
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

Contextual Info: OIXYS CS 20 Phase Control Thyristor v RRM = 1200-1600 V ^T RMS ” 30 A *T(AV)M = TO-247 AD Type CS 20-12io1 CS 20-14io1 CS 20-16io1 1200 1400 1600 1200 1400 1600 1 9 A C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions ^T(RMS) T"vj ^T(AV)M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors TO-220-3L BTB12 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 12 A 3. GATE VDRM/VRRM 600 V IGT(Q1) 5 to 50 mA DESCRIPTION The BTA/BTB12 and T12 triac series is suitable for general purpose AC

MCR100-6

Abstract: MCR100-8 mcr100-6 p mcr100 MCR1006 "Silicon Controlled Rectifiers" MCR100-6 Datasheet transistor mcr100-6 MCR100 8 mcr-100
Contextual Info: MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead Pb -Free SCRs 0.8 A RMS 400/600 Voltage A 1.Cathode 2.Gate 3.Anode G C 1 2 3 TO-92 Maximum Ratings (TA=25°C unless otherwise noted) Symbol MCR100-6 MCR100-8

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors BTB04 TO-220-3L TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 4 A VDRM/VRRM BTB04-400 BTB04-600 400 600 5 to 25 IGT 3. GATE V mA DESCRIPTION The BTB04 triac family are high performance glass passivated PNPN devices.These parts are suitables

Contextual Info: OIXYS CS 30 Phase Control Thyristor vRRM = 1200-1600 V I T RMS I V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 = 4 9 A = 3 1 A TO-247 AD Type CS 30-12io1 CS 30-14io1 CS 30-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions

X0402MF

Abstract: X0402
Contextual Info: INCHANGE Thyristors X0402MF ‹ Features ・With TO-202 package KAG ・1cathode 2 anode 3 gate ・Highly sensitive triggering levels ・For capacitive discharge ignitions,motor control In kitchen aids ,overvoltage crowbar protection In low power supplies applications

X0405MF

Contextual Info: INCHANGE Thyristors X0405MF ‹ Features KAG ・With TO-202 3 package ・1cathode 2 anode 3 gate ・Highly sensitive triggering levels ・For capacitive discharge ignitions,motor control In kitchen aids ,etc, applications ‹ QUICK REFERENCE DATA SYMBOL MIN

M/LT 2146

Abstract: rsm ah 16
Contextual Info: OIXYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type A O -^ T ‘ G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions

pixy

Contextual Info: aixY S CS 20 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V 1200 1400 1600 12 0 0 -1600 V T RMS 30 A T(AV)M 19 A TO-247 AD Type Ao ( ^ l ) o C G 1200 1400 1600 CS 20-12io1 CS 20-14io1 CS 20-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings

G2000HF250

Contextual Info: WESTCODE An Date:- 13 August, 2011 Data Sheet Issue:- A1 IXYS Company Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G2000HF250 Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VDRM Repetitive peak off-state voltage, note 1 2500

CS thyristor

Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
Contextual Info: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment

Contextual Info: WESTCODE An Date:- 31 Jan, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G1000QC400 to G1000QC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1

thy 266

Abstract: m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 BTR59 Gate Turn-Off Thyristors
Contextual Info: PHILIPS INTERNATIONAL SflE D m 7110ÔHb 0D5305Ô TOT H P H I N B T R 5 9 S E R IE S FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes which are capable o f being turned both on and o ff via the gate and may be used w ith gate-assisted tu rn -o ff in anode-commutated circuits. They are suitable fo r use in

BT151-600

Abstract: BT151 motor application bt151 TO-220 IEC134 IEC-134
Contextual Info: INCHANGE Thyristors BT151-600 ‹ Features •With TO-220 package ·1cathode 2 anode 3 gate ·For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and

thyristor 2P4M

Abstract: 2p4m equivalent 2P4M 2P4M datasheet 2P4M DATA SHEET TO202 package thyristor k 202 data sheet of 2p4m
Contextual Info: INCHANGE Thyristors 2P4M PLASTIC MOLDED THYRISTOR ‹ Features ・With TO-202 package ・1cathode 2 anode 3 gate KAG ‹ Absolute maximum ratings Ta=25℃ VDRM PARAMETER Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage SYMBOL On-state current

Contextual Info: Thyristor SMD Type Silicon Controlled Rectifiers HBT169M Features Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-state current :0.8A Non-repetitive peak on-state current :8A 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25

To92 thyristor

Abstract: Jiangsu Changjiang Electronics Technology Thyristor Itrms 120A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors PCR 0.6 A TO—92 Silicon Planar pnpn Thyristor FEATURES 1.CATHODE Current-IGT :120 A ITRMS : 2.GATE 0.6A 3.ANODE 1 2 3 VDRM : 400V Operating and storage junction temperature range

Contextual Info: Date:- 28 June, 2012 Data Sheet Issue:- P1 Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G2000HF450 Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VRSM Non-repetitive peak off-state voltage, (note 1)