AND/JANTX MARKINGS ON DIODE Search Results

Diode LT 228

Contextual Info: «V PROÏËK DEVICES W Æl _: , : IEngineered solutions fo r the transient environment DLZ-5 th ru DLZ-3QCA TVS DIODE AR R A/ APPLICATIONS FEATURES • • • • • • MIL-STD-461 Compatible 500 Watts Peak Pulse Power Dissipation 8/20 jis Available in 8 Voltage Types Ranging from 5.0V to 30V

DIODE 1N649

Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
Contextual Info: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1

Contextual Info: ® . . . . . Engineered solutions for the transient environment DLZ-5 thru DLZ-30CA TVS DIODE ARRAY MIL-STD-461 COMPATIBLE APPLICATIONS ● ● ● ● ● RS-232 & RS-423 Data Lines Microprocessor Based Equipment Low Frequency I/O Ports Multiple Data & Power Bus Line Protection

1N6122A JANTX

Abstract: 1N6121 1N6116A JANTX JANTX1N5626 JANTX 1N4246 JANTX 1N5811 JAN 1N5811 1N5416 JANTX JANTX 1N647-1 "general instrument 1n4946
Contextual Info: GENERAL INSTRUMENT # 1 IN PRICE, # 1 IN SERVICE, # 1 IN MILITARY General Instrument Power Semiconductor Division , is the world’s largest manufacturer of rectifiers and bridges, supplying over 2 billion annually. We’re proud to be number one in quality and reliability as we are

marking code vishay SILICONIX to-39

Contextual Info: 2N6660JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

jantx2n6661

Abstract: JANTX markings on diode
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

Diode SH-1

Abstract: se666 YHLZD-33 JANTX markings on diode LZD-32 L5386 YHLZD-40 SH-1 diode RLR20C YHLZR-47
Contextual Info: ENGINEERING REQUIREMENTS: NOTES: MATERIAL: 1. INTERPRET THIS DRAWING IN ACCORDANCE WITH AN5I Y14.5M-1982. BODY: Z Y T E L N0.151L OR EQUIVALENT 5ELF-EXTINGUI5HING ASTM D 6 35-56T NYLON, MIL-P-20693 AND FUNGUS RESISTANT. 1*1 34 H e sM SECTION 2-1 2. U N LE SS OTHERWISE SPECIFIED,

JANTX markings on diode

Abstract: 2N6659 70223
Contextual Info: 2N6660JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (Ω) VGS(th) (V) ID (A) 60 3 at VGS = 10 V 0.8 to 2 0.99 TO-205AD (TO-39) BENEFITS • Guaranteed Reliability • Low Offset Voltage

JANTX markings on diode

Abstract: and/JANTX markings on diode
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (Ω) VGS(th) (V) ID (A) 90 4 at VGS = 10 V 0.8 to 2 0.86 TO-205AD (TO-39) BENEFITS • Guaranteed Reliability • Low Offset Voltage

M83421

Abstract: M83421/01 RCR Resistor RCR07 resistor RCR07 military capacitor codes M83421 RNC Resistor military capacitor codes mica M8342 military part identification marking m83421
Contextual Info: UNSIGNED HARDCOPY NOT CONTROLLED Link Simulation & Training Instruction Hardware Engineering No. LMS 11-12 Subject: Electrical Component Identification APPROVED BY Manager, Hardware Engineering STATUS Maintenance Revision PURPOSE Defines and explains the techniques used for identifying the most common

1N36

Abstract: 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A DO-203AA
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

minor project proposal on electronics

Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Contextual Info: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C

UNF-2A

Abstract: 1N36
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

1N1199A

Abstract: 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N36 DO-203AA
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

Contextual Info: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

1N36

Abstract: 1n1199
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

Contextual Info: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

97942

Abstract: RX147 rx174 X40FG 96214 RX135 RX107 C5001049-1 RX204 581r887h01
Contextual Info: 44E » MIL SPECS 0 G 0 0 12 S 0 0 3 3 3 ^ 2 S « N I L S |The documentation and process conversion | |measures necessary to comply with this | ¡revision shall be completed by 3 0 D e c 93J IINCH-POUNDI I_ I MIL-S-19500/576A 30 June 1993 SUPERSEDING

4A2 zener diode

Abstract: 1N4569 JAN 1N4570A JANTX 1n4573 20771 1N4565A 1N4565A-1 1N4565AUR-1 Zener do35 marking code 9 a2 1N4566A
Contextual Info: MIL S P E C S 44 E ]> • 0000125 0033734 7 ■MILS The documentation and process | conversion measures necessary to | comply with this amendment shall be | completed by 2 November 1993 j - 1 |[NCH-POUND] 1- J

Contextual Info: VS-1N1.A, VS-1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

Contextual Info: VS-1N1.A, VS-1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, Stud Version , 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating

4001 1n diode

Abstract: 1N4801A 1N4801B 1N4815A 1N4815B 1N4808 1N4815
Contextual Info: MIL-S-19500/329C 4 October 1983 SUPERSEDING-MIL-S-19500/329B 4 March 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N4801A THROUGH 1N4815A AND 1N4801B THROUGH 1N4815B JAN, JANTX AND JANTXV This specification 1s approved for use by all Depart­

ta1938

Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
Contextual Info: MIL-S-19500/^ 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5835 and 1N5836 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment