AN60040 Search Results

PL301

Abstract: "3570 1210" FG873 N4000A N8975A
Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required TAV-551+ CASE STYLE: FG873

SAV-581

Abstract: PL300 MMM1362 840nH MARKING 04 MINI-CIRCUITS ENV08T2
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +30 dBm • Output Power at 1dB comp., +20 dBm • Medium Current, 30mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Output Power at 1dB comp., +18 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required

"3570 1210"

Abstract: 3570 1210 CC45T47K240G5 SAV-581 MMM1362 ATF-58143 840nH HP4155B TB-471 N8975A
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +30 dBm • Output Power at 1dB comp., +20 dBm • Medium Current, 30mA • Wide bandwidth • External biasing and matching required

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TAV-541

Abstract: FG873 N4000A N8975A tav 541
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

0119A

Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features •฀Low฀Noise฀Figure,฀0.5฀dB •฀Gain,฀16฀dB฀at฀2฀GHz •฀High฀Output฀IP3,฀+25฀dBm •฀Low฀Current,฀15mA •฀Wide฀bandwidth •฀External฀biasing฀and฀matching฀required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

atf-58143

Abstract: SAV-581 MMM1362 ATF-58143 application notes
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +30 dBm • Output Power at 1dB comp., +20 dBm • Medium Current, 30mA • Wide bandwidth • External biasing and matching required

SC 14430

Abstract: MMM1362 transistor 9015 sc 2304 sot 353 TB-471
Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Output Power at 1dB comp., +18 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL SAV541 avago marking -2
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: UNDERSTANDING NOISE PARAMETER MEASUREMENTS AN-60-040 Overview This application note reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc. Definitions and Theory The formulations in this note were derived from multiple sources, including References [1-3].

"3570 1210"

Abstract: FG873 N4000A N8975A TAV-581 CC45T47K240G5
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required

RF Transistor s-parameter

Abstract: AN-60-040 8971C TRANSISTOR SAV 17 padmanabha SAV-581 RF transistors with s-parameters noise source diode kelvin 1102 NF50
Contextual Info: UNDERSTANDING NOISE PARAMETER MEASUREMENTS AN-60-040 Overview This application note reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc. Definitions and Theory The formulations in this note were derived from multiple sources, including References [1-3].

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features •฀Low฀Noise฀Figure,฀0.5฀dB •฀Gain,฀17฀dB฀at฀2฀GHz •฀High฀Output฀IP3,฀+31฀dBm •฀Output฀Power฀at฀1dB฀comp.,฀+19฀dBm •฀Low฀Current,฀30mA

0349a

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features •฀Low฀Noise฀Figure,฀0.5฀dB •฀Gain,฀17฀dB฀at฀2฀GHz •฀High฀Output฀IP3,฀+30฀dBm •฀Output฀Power฀at฀1dB฀comp.,฀+20฀dBm •฀Medium฀Current,฀30mA

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features •฀Low฀Noise฀Figure,฀0.5฀dB •฀Gain,฀17฀dB฀at฀2฀GHz •฀High฀Output฀IP3,฀+33฀dBm •฀Output฀Power฀at฀1dB฀comp.,฀+19฀dBm •฀High฀Current,฀60mA

TAV-541

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required