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    AN4869 Search Results

    AN4869 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AN4869
    		Dynex Power Assemblies Original PDF 117.8KB 5
    SF Impression Pixel

    AN4869 Price and Stock

    onsemi

    onsemi FAN48695UC190X

    IC REG BOOST 5V 1A DL 9WLCSP
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    AN4869 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    and/and/AN4869

    Contextual Info: TGD-1X AN4869 Formulating Technical Enquiries Application Note Supersedes November 1997 version, AN4869 - 1.2 If you have just written down or are about to write down a technical enquiry for thyristors, rectifiers or heatsink assemblies then please spare a few minutes to read through


    Original     		AN4869 AN4869 and/and/AN4869 PDF

    t1ig

    Abstract: AN4869 DIAGRAM thyristor inverter
    Contextual Info: ANxxxx Application Note AN4869 Formulating Technical Enquiries Application Note Replaces September 2000 version, AN4869-3.0 If you have just written down or are about to write down a technical enquiry for thyristors, rectifiers or heatsink assemblies then please spare a few minutes to read through the following


    Original     		AN4869 AN4869-3 t1ig AN4869 DIAGRAM thyristor inverter PDF

    GP800

    Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
    Contextual Info: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		GP800DCS18 DS5221-4 DS5221-5 GP800 AN4508 AN4502 AN4503 AN4505 GP800DCS18 dc chopper circuit application PDF

    GP801DCM18

    Abstract: AN4502 AN4503 AN4505 AN4506
    Contextual Info: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		GP801DCM18 DS5365-3 GP801DCM18 AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
    Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		GP401LSS18 DS5288-1 GP401LSS18 AN4502 AN4503 DSA0018823 ups sine wave inverter circuit diagram PDF

    AN4502

    Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
    Contextual Info: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001


    Original     		GP2401ESM18 DS5345-1 DS5345-2 AN4502 AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DCM18
    Contextual Info: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP800DCM18 DS5363-3 GP800DCM18 an1800V, AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
    Contextual Info: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


    Original     		GP200MLK12 GP200MKS12 DS5448-1 AN4502 AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190 PDF

    beam Tube

    Abstract: spark gap TP-105 thyratron AN4020
    Contextual Info: 8976 Power Tube VHF Linear Beam Power Tube - Full Input to 400 MHz Forced-Air Cooled - 18.7 kW Peak Sync. Output VHF-TV Band 15 dB Gain - CERMOLOX Beam Power Tube L The BURLE 8976 is designed specifically for use in high-gain, high-linearity equipments for VHF-TV service.


    Original     		PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM18
    Contextual Info: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP2400ESM18 DS5406-1 GP2400ESM18 AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
    Contextual Info: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001


    Original     		GP800NSS33 DS5358-2 GP800NSS33 AN4502 AN4503 AN4505 AN4506 an5167 440nF DS-5358 PDF

    723 ic internal diagram

    Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
    Contextual Info: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)


    Original     		GP1201FSS18 DS5411-1 GP1201FSS18 723 ic internal diagram AN4502 AN4503 AN4505 AN4506 PDF

    K1p TRANSISTOR

    Abstract: AN4502 AN4503 AN4505 GP1600FSM18
    Contextual Info: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001


    Original     		GP1600FSM18 DS5361-1 DS5361-2 GP1600FSM18 K1p TRANSISTOR AN4502 AN4503 AN4505 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP400DDS18
    Contextual Info: GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)


    Original     		GP400DDS18 DS5359-2 GP400DDS18 AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 AN4505 GP800FSS18
    Contextual Info: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		GP800FSS18 DS5261-2 DS5261-3 AN4502 AN4503 AN4505 GP800FSS18 PDF

    a3021

    Abstract: ignitron tube 9007 socket spark gap tube amplifier power transformers TP-105 thyratron Q 0265 R 885 thyratron
    Contextual Info: 9007 Power Tube VHF Linear Power Amplifier Tube 33 Kilowatt Peak Sync Output Thru VHF-TV Band - 14 dB Gain - High Gain-Bandwidth Products - Efficient Forced-Air Cooling - Full Input to 400 MHz - CERMOLOXR Construction The BURLE 9007 is designed specifically for use in high-gain,


    Original     		PDF

    DS5402-1

    Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
    Contextual Info: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP800FSM18 DS5402-1 GP800FSM18 AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
    Contextual Info: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001


    Original     		GP1601FSS18 DS5248-3 DS5248-4 AN4502 AN4503 AN4505 GP1601FSS18 PDF

    AN5190

    Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
    Contextual Info: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ


    Original     		GP200MHS12 GP200MHB12S DS4339-5 DS5296-1 GP200MHS12 AN5190 AN4502 AN4503 AN4508 PDF

    DS5401-1

    Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
    Contextual Info: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		GP801FSM18 DS5401-1 GP801FSM18 basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 DS5401 PDF

    TOKO Catalogue

    Abstract: an5183 sl1461sa mt8870 ic AN4883 1.5um cmos process family murata saw filter Stand Alone FFT Processor pac dsp 1A212
    Contextual Info: Mitel Semiconductor - Catalogue file:///D|/cd/catalog2.htm Full Catalogue This is a full catalogue of all of the data on the CD. Product Datasheets Application Notes Product Datasheets Part Number Description Application Category File 1A184A "870nm, 140MHz


    Original     		1A184A 870nm, 140MHz 850nm, 35MHz 880nm, 45MHz 860nm, 70MHz TOKO Catalogue an5183 sl1461sa mt8870 ic AN4883 1.5um cmos process family murata saw filter Stand Alone FFT Processor pac dsp 1A212 PDF

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Contextual Info: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


    Original     		GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
    Contextual Info: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		GP800DDM12 DS5291-1 DS5291-2 AN4502 AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP201MHS18
    Contextual Info: GP201MHS18 GP201MHS18 Low VCE SAT Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters


    Original     		GP201MHS18 DS5290-2 AN4502 AN4503 AN4505 AN4506 GP201MHS18 PDF