AN-940 NATIONAL Search Results

CECC00802

Abstract: J-STD-020B VSML3710 VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package, released for Lead (Pb)-free Reflow Soldering.

P0846SNL

Abstract: code l48 LM267X P0841SNL P0849NL P0849SNL 5309130 P0848NL
Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 260kHz Simple Switcher Tested and recommended by National Semiconductor for the LM267X series Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions

Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 260kHz Simple Switcher Tested and recommended by National Semiconductor for the LM267X series Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions

xc 250

Abstract: XC-55-P XC-01 XC-02 XC-06 XC-1209 XC-55-F XC-940 XC-941 XC-944
Contextual Info: HIGH OUTPUT 940 nm INFRARED EMITTERS HIGH OUTPUT 697 nm VISIBLE EMITTERS Plastic Infrared Emitters XC-1209 Low Profile Visible Emitter TO-46 Infrared Emitters XC-940 XC-941 XC-55-F Series Plastic Visible Emitters 697 VISIBLE EMITTERS 940 nm HIGH OUTPUT INFRARED EMITTERS

PE-53818Snl

Abstract: PE-53829NL PE-54041NL PE-54039 pe-54040snl PE-54037NL pe-53818nl PE-54043NL KM10 equivalent PE-53831SNL
Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 150kHz Simple Switcher Tested and recommended by National Semiconductor Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions Electrical Specifications @ 25°C— Operating Temperature -40° to +130° C 7

PE-53934NL

Abstract: pe-54040snl PE-54043NL pe-53831snl PE-53818Snl PE-53935NL pe-53829snl 5309130 PE-53824SNL 53932nl
Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 150kHz Simple Switcher Tested and recommended by National Semiconductor Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions Electrical Specifications @ 25°C— Operating Temperature -40° to +130° C 7

23N50

Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

8140 SOURIAU

Abstract: BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

infrared remote control ON/OFF switch application

Abstract: RF remote control circuit diagram RF based remote control trw RF POWER TRANSISTOR 4 channel long range RF based remote control diagram remote control receiver and transmitter SMD codes databook light dependent resistor "universal remote control" chip circuit diagram of very long range remote control
Contextual Info: HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface between logic and IR

lexan 940

Abstract: diagram remote control receiver and transmitter lexan 920A RF based remote control APPLICATION RF remote control circuit diagram "universal remote control" chip infrared remote control ON/OFF switch application RF based remote control BSH103 FDC37C669
Contextual Info: HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description Features The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface between logic and IR

lexan transparent

Contextual Info: Agilent HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface

3002

Abstract: BSH103 FDC37C669 FDC37N769 HSDL-3002 HSDL-3002-007 HSDL3602 HSDL-3602 PC87109 2 pin ir led receiver 455
Contextual Info: Agilent HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface

Contextual Info: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead

XC-55-P

Abstract: XC-88-30 XC-88P XC-10 XC-1288 XC-880 XC-881 XC-88-50 XC-88F XC-88-F
Contextual Info: t SI SUPER HIGH OUTPUT 880 nm INFRARED EMITTERS Plastic Infrared Emitters TO-46 Infrared Emitters XC-1288 XC-880 XC-881 Low Profile IR TO-46 Header Emitter XC-88-F Series XC-88-P Series 880 nm S U P E R IN F R A R ED E M IT T E R S OPTO ELECTRON IC C H A R A C T E R IS T IC S

BLMG1

Abstract: mmic e3 4350B HSOP16 BLM6G10-30G
Contextual Info: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead

WCDMA900

Abstract: mmic e3 BLM6G22-30G HSOP16
Contextual Info: BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC Rev. 01 — 28 August 2009 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 920 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead

Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

SMD r801

Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

c102 TRANSISTOR

Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

b25353

Abstract: B25355 B25650 metallschicht
Contextual Info: Designing the Future Unser Haus entwickelt und fertigt für die Leistungselektronik ein breites Spektrum hochmoderner Gleich- und Wechselspannungskondensatoren. Damit sind wir Marktführer in Europa und weltweit ein Anbieter, der sich auch in Schlüsselmärkten wie USA und Japan einen guten Namen

617PS-40369

Contextual Info: AN11299 BGA301x - 40 MHz to 1006 MHz push-pull application Rev. 2 — 21 August 2013 Application note Document information Info Content Keywords BGA3012, BGA3015, BGA3018, evaluation board, CATV, drop amplifier, push-pull, wideband Abstract This application note describes the schematic and layout requirements

npn phototransistor XC500A

Abstract: IR Phototransistor Detector 880nm NPN Silicon Phototransistor XC-500A npn phototransistor package XC-802W emitter ir 3mm XC-500C XC800W XC-500E
Contextual Info: DETECTORS/ PHOTOTRANSISTORS T1 PACKAGE XC-500 SERIES NPN SILICON PHOTOTRANSISTOR Package B Opto-Electrical Characteristic at 25 Ambient Sym b o l II M in Dark C urrent VCE = 10,H = Om W /cm 2 V BR CEO C o llecto r-B rea k d o w n Voltage lc = 100 n A V (B R )E C O

XC-55-P

Abstract: XC-88P XC Series XC-10 XC-1288 XC-55-25 XC-55-F XC-88-F XC-88-P XC-880
Contextual Info: INFRARED EMITTERS TYPICAL INSTANTANEOUS POWER OUTPUT VS FORWARD CURRENT 940 nm HIG H OUTPUT RELATIVE POWER OUTPUT NORMALIZED TO 100 mA 880 nm SUPER HIGH OUTPUT I, IN AMPERES ll IN AM PERES TYP INSTANTANEOUS POWER OUTPUT VS FORWARD CURRENT @ 25°C XC-55-25, XC-55-F AND XC-55-P SERIES

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents