AN-1068 EQUIVALENT Search Results

RDHA718SD10C1BK

Abstract: HOW TO DRIVE SSR USING MOSFET DRIVER solar battery charger 12 volt circuit schematic RDHA718SE10A2SK RDHA718SE10A2QK RDHA718SE13A2FK RDHA718FD10C1BK 10 amp 12 volt solar charger circuits OPTO SMD4 RDHA720SF06A1NK
Contextual Info: Application Note AN-1068 revA Considerations for Designs Using Radiation-Hardened Solid State Relays By Alan Tasker Table of Contents Introduction Page Overview .1

Contextual Info: Final Electrical Specifications r r u n w LTC 1068-25 i . TECHNOLOGY High Speed, Low Noise Q uad Universal Filter Building Block February 1998 F€flTUR€S DCSCRIPTIOn • Four Identical 2nd Order Filters in an SSOP Package ■ Maximum Center Frequency up to 200kHz

CY62256

Abstract: CY62256L CY62256LL
Contextual Info: fax id: 1068 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and

Contextual Info: DIMDTMIL [F3ËUMSË Final Electrical Specifications H im TECHNOLOGY LTC 1068-200 Very Low Noise, High A ccuracy, Q uad Universal Filter Building Block February 1998 F€flTUR€S D6SCRIPTIOH • Four Identical 2nd Order Filters in an SSOP Package The LTC 1068-200 consists of four identical, low noise,

CY62256-55SNC

Abstract: CY62256-70SNC CY62256 CY62256-55 CY62256-70 CY62256L-55SNC CY62256LL-55SNC sc007
Contextual Info: fax id: 1068 CY62256 32Kx8 Static RAM Features o u tput enable OE and three -state drivers. T his device has an a u to m a tic pow er-dow n feature, reducing th e po w e r co n su m p ­ tion by 99 .9% w hen deselected. The C Y 6 22 56 is in the sta n ­

Contextual Info: fax id: 1068 _CY62256 32Kx8 Static RAM Features ou tp u t enable OE and th re e -sta te drivers. T his device has an au to m a tic po w er-dow n feature, reducing the po w e r c o n s u m p ­ tion by 99 .9% w hen de selected . The C Y 6 22 56 is in the sta n ­

C62256-4

Abstract: CY62256 CY62256-55 CY62256-55SNC CY62256-55ZRC CY62256-70 CY62256L-55SNC CY62256L-55ZRC CY62256LL-55SNC ZR28
Contextual Info: fax id: 1068 CY62256 32Kx8 Static RAM Features ou tput enable OE and three -state drivers. T his device has an au to m a tic pow er-dow n feature, reducing th e po w e r co n su m p ­ tion by 99 .9% w hen deselected. The C Y 6 22 56 is in the sta n ­ dard 4 5 0 -m il-w id e (300-m il body w idth) SO IC, TSOP, and

JPC BATTERY

Abstract: BD 7214 LTC1068IG-25 DC-104 TA11A WIRING DIAGRAM up to 500khz center frequency bandpass filter
Contextual Info: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks U DESCRIPTIO FEATURES • ■ ■ ■ ■ The LTC 1068 product family consists of four monolithic clock-tunable filter building blocks. Each product contains four matched, low noise, high accuracy 2nd order switchedcapacitor filter sections. An external clock tunes the center

LTC1068

Abstract: LTC1068-200 LTC1068-200CG LTC1068-25 LTC1068-50 LTC1068-50CG LTC1068CG
Contextual Info: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks U FEATURES DESCRIPTIO • The LTC 1068 product family consists of four monolithic clock-tunable filter building blocks. Each product contains four matched, low noise, high accuracy 2nd order switchedcapacitor filter sections. An external clock tunes the center

LTC1068-200CG

Abstract: r44 marking
Contextual Info: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks FEATURES DESCRIPTION Four Identical 2nd Order Filter Sections in an SSOP Package n 2nd Order Section Center Frequency Error: ± 0.3% Typical and ±0.8% Maximum n Low Noise per 2nd Order Section, Q ≤ 5:

Contextual Info: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks FEATURES • ■ ■ ■ U ■ DESCRIPTIO Four Identical 2nd Order Filter Sections in an SSOP Package 2nd Order Section Center Frequency Error: ±0.3% Typical and ±0.8% Maximum Low Noise per 2nd Order Section, Q ≤ 5:

HS 1068

Abstract: abw 1k potentiometer
Contextual Info: Sipex H S10 68 * C o rp o ra tio n ^ SIGNAL PROCESSING EXCELLENCE FLASH PLUS 8-BIT 20 M SPS A/D CO N VERTER FEATURES • C om plete an a log front-end and ADC in a single p a cka g e ■ 20 MHz sam pling rate ■ Pin strappable unipolar or b ip o la r input ranges

FPWL

Abstract: HS1068
Contextual Info: S i p* w v HS1068 C orpo ratio n^ SIGNAL PROCESSING EXCELLENCE FLASH PLUS 8-BIT 20 MSPS A /D CONVERTER FEATURES • Complete analog front-end and ADC in a single p ackage ■ 20 MHz sampling rate ■ Pin strappable unipolar or bipolar input ranges ■ Offset and gain adjust pins

MCA479

Abstract: PC03310 Piezoelectric Transducer hm ir amplifier PCD3343 A1068 S020 TEA1060 TEA1068 TEA1068T
Contextual Info: Product specification Philips Semiconductors Versatile telephone transmission circuit with dialler interface TEA1068 G E N E R A L D ES C R IPTIO N The T E A 1 0 6 8 is a bipolar integrated circuit performing all speech and line interface functions required

TDC1012

Abstract: TDC1048 MARKING lsi logic 10-TURN FHC1068 THC1068 THC1068E1C THC1068S7V1 irf 5110 B24DA
Contextual Info: FHC1068 7 #7 r V Complete High-Speed A/D Converter 8-Bit, 25Msps Designed to be user-friendly, th e T H C 1068 is a com plete flash ana lo g -to -d ig ita l conve rter th a t com bines all circuitry required to convert high-speed analog signals into 8 -b it

MA4E2054E-1068T

Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
Contextual Info: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS

Wheatstone Bridge INA 125 P

Abstract: ME 1117 voltage regulator TEA1068 Wheatstone Resistive Bridge amplifier ina 114
Contextual Info: Philips Semiconductors Product specification Versatile telephone transmission circuit with dialler interface • Large gain setting range on microphone and earpiece amplifiers FEATURES • Voltage regulator with adjustable static resistance • Provides supply for external circuitry

Contextual Info: MA4E2200 Series Surface Mount Zero Bias Schottky Detector Diodes M/A-COM Products Rev. V5 Features • Designed for High Volume, Low Cost Detector Applications • Available in Single, Series Pair and Unconnected Pair Configurations • Small Profile Surface Mount Packages

MADS-002200-12790T

Abstract: SCHOTTKY DIODE SOT-143 MA4E2200 MA4E2200A1-1141T MA4E2200B1-287T MA4E2200B-287T MA4E2200D1-287T MA4E2200D-287T MA4E2200E-1068T MA4E2200E1-1068T
Contextual Info: MA4E2200 Series Surface Mount Zero Bias Schottky Detector Diodes M/A-COM Products Rev. V6 Features • Designed for High Volume, Low Cost Detector Applications • Available in Single, Series Pair and Unconnected Pair Configurations • Small Profile Surface Mount Packages

MACOM SOT23 MARK

Abstract: MACOM SOT23 TOPVIEWS
Contextual Info: MA4E2200 Series Surface Mount Zero Bias Schottky Detector Diodes M/A-COM Products Rev. V5 Features • Designed for High Volume, Low Cost Detector Applications • Available in Single, Series Pair and Unconnected Pair Configurations • Small Profile Surface Mount Packages

ME 1117 voltage regulator

Abstract: DIP18 TEA1060 TEA1068 TEA1068T
Contextual Info: Philips Semiconductors Product specification Versatile telephone transmission circuit with dialler interface TEA1068 • Large gain setting range on microphone and earpiece amplifiers FEATURES • Voltage regulator with adjustable static resistance • Provides supply for external circuitry

MA4E2054-1141T

Contextual Info: MA4E2054 Series M/A-Com Products V9 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS • Low Capacitance: 0.30 pF

MB8117400B-60PJ

Contextual Info: July 1997 Revision 1.0 data sheet FSA8UN3642B-60J G/S -S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642B-60J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

Contextual Info: cP IITSU July 1997 Revision 1.0 data sheet FSA8UN3642B-60J G/S -S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642B-60J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.