AMPLIFIER SHF Search Results

BGY113B

Abstract: BGY113A BGY113C FERROXCUBE 4330
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY113A; BGY113B; BGY113C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY113A, BGY113B and BGY113C are UHF power amplifier modules. • 7 W output power Each module consists of four NPN silicon Planartransistor

triac controlled lead acid battery charger

Abstract: MSM6388GS-V1K TDA7256 15 pin
Contextual Info: INDEX Order Code Description Manufacturer AD5802U AD5820U INA116PA PGA207PA OPA655xP OPA655P 12-Bit, 10 MHz Sampling Analog-to-Digital Converter 10-Bit, 20 MHz Sampling Analog-to-Digital Converter Ultra Low Input Bias Current Instrumentation Amplifier High-Speed Programmable Gain Instrumentation Amplifier

Contextual Info: >O N Y I_ C X A 3117N IF Amplifier for M-ary FSK Pagers Description The CXA3117N is a low current consumption FM IF amplifier which employs the newest bipolar process. It is suitable for M-ary FSK pagers. Features • Low current consumption: 1.1 mA

2SK1229

Abstract: 2ROPT
Contextual Info: l— 2SK1229 — - Preliminary SIE D • 44^205 DOIITÔT T06 ■ H I T 4 GaAsN-Channel HEMT ■ OUTLINE DRAWING SHF Converter RF Amplifier HITACHI/ OPTOELECTRONICS ■FEATURES • Low Noise, High Gain

SHF-0189

Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
Contextual Info: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

Contextual Info: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES P1 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

SHF-0289

Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S
Contextual Info: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

Contextual Info: MT4S301T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C

Contextual Info: MT4S300T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P3 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C

60GHz transistor

Abstract: 2-1E1A
Contextual Info: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:|S21e|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

Contextual Info: MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.9dB @f=2GHz • High Gain:|S21e|2=11.5dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

60Ghz

Abstract: 60GHz transistor MT4S104T
Contextual Info: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 3 4 P1 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

Contextual Info: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.8±0.05 2 1 High Gain:|S21e|2=10.5dB @f=5.2GHz 4 • 1.2±0.05 Low Noise Figure :NF=1.25dB (@f=5.2GHz) 3

Contextual Info: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:|S21e|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P8 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

Contextual Info: MT4S104U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:|S21e|2=10.0dB @f=5.2GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.25dB (@f=5.2GHz)

MT4S102T

Abstract: TOSHIBA MICROWAVE AMPLIFIER 0-58dB
Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES • Low Noise Figure :NF=0.58dB @f=2GHz • High Gain:|S21e| =16.0dB (@f=2GHz) 4 3 P 8 1 2 0.8±0.05 1.2±0.05

Contextual Info: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 0.2+0.1 –0.05 1 High Gain:|S21e|2=15.0dB @f=2GHz 3 • 4 Low Noise Figure :NF=0.58dB (@f=2GHz) 2.0±0.2

Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.8±0.05 2 1 High Gain:|S21e|2=16.0dB @f=2GHz 4 • 1.2±0.05 Low Noise Figure :NF=0.58dB (@f=2GHz) 3 0.9±0.05

Contextual Info: MT4S104U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:|S21e|2=10.0dB @f=5.2GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.25dB (@f=5.2GHz)

313-105

Abstract: 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406
Contextual Info: TOSHIBA 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K 3 1 79 UHF-SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Gate-Drain Voltage

Contextual Info: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 0.2+0.1 –0.05 2 1 High Gain:|S21e|2=15.0dB @f=2GHz 3 • 4 Low Noise Figure :NF=0.58dB (@f=2GHz) 2.0±0.2

Contextual Info: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:|S21e|2=9.5dB @f=5.8GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.7dB (@f=5.8GHz)